18744975. SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR PREPARING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
Contents
SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR PREPARING THE SAME
Organization Name
Inventor(s)
TSE-YAO Huang of TAIPEI CITY (TW)
SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR PREPARING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18744975 titled 'SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR PREPARING THE SAME
Simplified Explanation: The semiconductor device described in the patent application consists of layers forming an I-shaped structure with an air gap surrounded by an isolation layer.
Key Features and Innovation:
- Semiconductor device with a unique I-shaped structure
- Includes bottom barrier layer, conductive contact, and top barrier layer
- Isolation layer adjacent to the I-shaped structure
- Air gap surrounded by the isolation layer
Potential Applications: This technology could be used in:
- Semiconductor manufacturing
- Electronics industry
- Integrated circuits
Problems Solved: The technology addresses:
- Improving semiconductor device performance
- Enhancing isolation capabilities
- Increasing efficiency in electronic devices
Benefits:
- Enhanced semiconductor device functionality
- Improved isolation for better performance
- Potential for increased efficiency in electronic devices
Commercial Applications: Potential commercial uses include:
- Semiconductor manufacturing companies
- Electronics manufacturers
- Research and development in the semiconductor industry
Prior Art: Readers can explore prior art related to this technology in:
- Semiconductor device manufacturing
- Barrier layer technologies
- Isolation techniques in electronic devices
Frequently Updated Research: Stay informed about the latest research in:
- Semiconductor device design
- Barrier layer materials
- Isolation techniques in semiconductor technology
Questions about Semiconductor Device Technology: 1. What are the key components of the I-shaped structure in the semiconductor device? 2. How does the air gap surrounded by the isolation layer contribute to the device's performance?
Original Abstract Submitted
A semiconductor device includes a bottom barrier layer disposed over a semiconductor substrate, and a conductive contact disposed over the bottom barrier layer. The semiconductor device also includes a top barrier layer disposed over the conductive contact. The bottom barrier layer, the conductive contact, and the top barrier layer form an I-shaped structure. The semiconductor device further includes an isolation layer disposed adjacent to the I-shaped structure and extending into the semiconductor substrate. An air gap is surrounded by the isolation layer.
