18744946. MEMORY DEVICE HAVING MEMORY CELL WITH REDUCED PROTRUSION simplified abstract (NANYA TECHNOLOGY CORPORATION)
Contents
MEMORY DEVICE HAVING MEMORY CELL WITH REDUCED PROTRUSION
Organization Name
Inventor(s)
CHING-KAI Chuang of TAIPEI CITY (TW)
MEMORY DEVICE HAVING MEMORY CELL WITH REDUCED PROTRUSION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18744946 titled 'MEMORY DEVICE HAVING MEMORY CELL WITH REDUCED PROTRUSION
The present application describes a memory device with a memory cell that has a reduced protrusion protruding from the memory cell. The memory device includes various layers such as a semiconductive layer, a conductive layer, and an insulating layer, as well as a protrusion with a unique undercut profile.
- Memory device with reduced protrusion from memory cell
- Semiconductor substrate with a fin portion protruding from the surface
- Layers including semiconductive, conductive, and insulating layers
- Protrusion with first, second, and third protruding portions
- Protrusion has an undercut profile
Potential Applications: - Semiconductor manufacturing - Memory storage devices - Integrated circuits
Problems Solved: - Reducing protrusion size in memory cells - Improving memory device performance - Enhancing semiconductor substrate design
Benefits: - Increased memory device efficiency - Improved overall device performance - Enhanced semiconductor manufacturing processes
Commercial Applications: Title: "Innovative Memory Device with Reduced Protrusion for Enhanced Performance" This technology can be utilized in the production of various memory storage devices, leading to improved performance and efficiency in electronic devices. It can also benefit semiconductor manufacturers looking to enhance their product offerings.
Prior Art: Readers can explore prior patents related to memory devices, semiconductor manufacturing, and memory cell design to gain a deeper understanding of the innovation presented in this application.
Frequently Updated Research: Stay updated on the latest advancements in memory device technology, semiconductor manufacturing, and memory cell design to further enhance your knowledge in this field.
Questions about Memory Device with Reduced Protrusion: 1. How does the reduced protrusion in the memory cell impact overall device performance? 2. What are the potential challenges in implementing this technology in semiconductor manufacturing processes?
Original Abstract Submitted
The present application provides a memory device having a memory cell with reduced protrusion protruding from the memory cell. The memory device includes a semiconductor substrate having a fin portion protruding from a surface of the semiconductor substrate; a semiconductive layer disposed conformal to the fin portion; a conductive layer disposed over the semiconductive layer; an insulating layer disposed over the conductive layer; and a protrusion including a first protruding portion laterally protruding from the semiconductive layer and along the surface, a second protruding portion laterally protruding from the conductive layer and over the first protruding portion, and a third protruding portion laterally protruding from the insulating layer and over the second protruding portion, wherein the protrusion has an undercut profile.
