18234038. MEMORY DEVICE HAVING PLANARIZED FINS AND METHOD OF MANUFACTURING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
Contents
MEMORY DEVICE HAVING PLANARIZED FINS AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
YING-CHENG Chuang of TAOYUAN CITY (TW)
MEMORY DEVICE HAVING PLANARIZED FINS AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18234038 titled 'MEMORY DEVICE HAVING PLANARIZED FINS AND METHOD OF MANUFACTURING THE SAME
The present disclosure describes a memory device and a method of manufacturing it, with a semiconductor substrate containing fins within an active area, each fin having a planar top surface, and various layers including oxide, conductive, and nitride layers.
- Memory device with semiconductor substrate and fins in active area
- Layers include oxide, conductive, and nitride layers
- Method of manufacturing memory device
Potential Applications: - Memory devices in electronic devices - Semiconductor manufacturing industry
Problems Solved: - Efficient memory storage - Improved performance of electronic devices
Benefits: - Higher memory capacity - Enhanced device performance
Commercial Applications: Title: Advanced Memory Devices for Electronics Industry This technology can be used in various electronic devices, improving memory capacity and device performance, leading to better user experience and increased market competitiveness.
Prior Art: Researchers can explore prior patents related to memory devices, semiconductor manufacturing, and oxide/conductive/nitride layer technology to understand the existing knowledge in this field.
Frequently Updated Research: Researchers can stay updated on advancements in semiconductor manufacturing, memory device technology, and materials science to enhance their understanding of this innovative memory device.
Questions about Memory Devices: 1. How does the structure of the memory device impact its performance? The structure of the memory device, including the arrangement of fins and layers, directly affects its efficiency and storage capacity.
2. What are the key differences between this memory device and traditional memory technologies? This memory device stands out due to its unique fin structure and the use of specific layers like oxide, conductive, and nitride layers, which contribute to its improved performance and storage capabilities.
Original Abstract Submitted
The present disclosure provides a memory device and a method of manufacturing the memory device. The memory device includes a semiconductor substrate defined with an active area and including a plurality of fins protruding from the semiconductor substrate and disposed within the active area, wherein each of the plurality of fins has a first planar top surface; a first word line extending into the semiconductor substrate and between an adjacent two of the plurality of fins, wherein the first word line includes an oxide layer conformal to surfaces of the adjacent two of the plurality of fins, a first conductive member surrounded by the oxide layer, and a first nitride layer disposed over the first conductive member and surrounded by the oxide layer; and an isolation extending into the semiconductor substrate and surrounding the active area.
