18131962. MEMORY DEVICE HAVING PLANARIZED FINS AND METHOD OF MANUFACTURING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
Contents
MEMORY DEVICE HAVING PLANARIZED FINS AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
YING-CHENG Chuang of TAOYUAN CITY (TW)
MEMORY DEVICE HAVING PLANARIZED FINS AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18131962 titled 'MEMORY DEVICE HAVING PLANARIZED FINS AND METHOD OF MANUFACTURING THE SAME
The present disclosure introduces a memory device and a method for manufacturing it. The memory device consists of a semiconductor substrate with an active area, featuring multiple fins protruding from the substrate within the active area, each fin having a flat top surface. Additionally, the device includes a word line and an isolation structure embedded in the semiconductor substrate.
- The memory device incorporates fins protruding from the semiconductor substrate within the active area.
- A word line extends between adjacent fins, comprising an oxide layer, a conductive member, and a nitride layer.
- An isolation structure surrounds the active area, providing structural support and electrical insulation.
Potential Applications: - This memory device can be utilized in various electronic devices such as smartphones, tablets, and computers. - It can also be employed in data storage systems, servers, and other computing applications.
Problems Solved: - The memory device addresses the need for efficient and compact memory solutions in modern electronic devices. - It provides a reliable and high-performance memory storage option for a wide range of applications.
Benefits: - Improved memory storage capacity and speed. - Enhanced reliability and durability of memory devices. - Compact design for space-saving in electronic devices.
Commercial Applications: Memory devices like the one described can revolutionize the electronics industry by offering faster and more efficient data storage solutions. This innovation has the potential to impact various sectors, including consumer electronics, data centers, and telecommunications.
Questions about Memory Devices: 1. How does the structure of the memory device impact its performance? The structure of the memory device, with fins and word lines, allows for efficient data storage and retrieval processes, enhancing overall performance.
2. What sets this memory device apart from traditional memory technologies? This memory device stands out due to its innovative design, which improves memory capacity, speed, and reliability compared to traditional memory technologies.
Original Abstract Submitted
The present disclosure provides a memory device and a method of manufacturing the memory device. The memory device includes a semiconductor substrate defined with an active area and including a plurality of fins protruding from the semiconductor substrate and disposed within the active area, wherein each of the plurality of fins has a first planar top surface; a first word line extending into the semiconductor substrate and between an adjacent two of the plurality of fins, wherein the first word line includes an oxide layer conformal to surfaces of the adjacent two of the plurality of fins, a first conductive member surrounded by the oxide layer, and a first nitride layer disposed over the first conductive member and surrounded by the oxide layer; and an isolation extending into the semiconductor substrate and surrounding the active area.
