18746358. CONTACT STRCUTRE AND METHOD FOR PREPARING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
Contents
CONTACT STRCUTRE AND METHOD FOR PREPARING THE SAME
Organization Name
Inventor(s)
SHENG-HUI Yang of TAOYUAN CITY (TW)
CONTACT STRCUTRE AND METHOD FOR PREPARING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18746358 titled 'CONTACT STRCUTRE AND METHOD FOR PREPARING THE SAME
Simplified Explanation:
The patent application describes a contact structure with multiple layers and elements, including a recessed structure, conductive feature, functional layers, and an interfacial layer.
- The contact structure includes a recessed structure.
- A conductive feature is filled in the recess of the recessed structure.
- A first functional layer extends between the conductive feature and the recessed structure.
- A second functional layer extends between the first functional layer and the conductive feature.
- The interfacial layer includes elements from the first and second functional layers.
Key Features and Innovation:
- Multi-layered contact structure design.
- Use of recessed structure for conductive feature placement.
- Interfacial layer with elements from different functional layers.
Potential Applications:
The technology could be applied in various electronic devices, sensors, and semiconductor components.
Problems Solved:
The contact structure design addresses issues related to conductivity, interface stability, and overall performance in electronic systems.
Benefits:
- Enhanced conductivity.
- Improved interface stability.
- Increased overall performance in electronic devices.
Commercial Applications:
Potential commercial applications include the manufacturing of advanced electronic components, sensors, and semiconductor devices for various industries.
Questions about the Technology:
1. How does the multi-layered design of the contact structure improve performance? 2. What are the specific advantages of using a recessed structure for the conductive feature placement?
Original Abstract Submitted
A contact structure and a manufacturing method are provided. The contact structure includes a recessed structure, a conductive feature, a first functional layer, a second functional layer and an interfacial layer. The conductive feature is filled in a recess of the recessed structure. The first functional layer extends between the conductive feature and the recessed structure. The second functional layer extends between the first functional layer and the conductive feature. The interfacial extends along an interface between the first and second functional layers, and includes a first element from the first functional layer and a second element from the second functional layer.
