18234042. SEMICONDUCTOR DEVICE WITH FILLING LAYER AND METHOD FOR FABRICATING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
Contents
SEMICONDUCTOR DEVICE WITH FILLING LAYER AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
TSE-YAO Huang of TAIPEI CITY (TW)
SEMICONDUCTOR DEVICE WITH FILLING LAYER AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18234042 titled 'SEMICONDUCTOR DEVICE WITH FILLING LAYER AND METHOD FOR FABRICATING THE SAME
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a conductive structure with a V-shaped cross-sectional profile; a conductive filling layer containing germanium or silicon germanium; and a top conductive layer.
- The semiconductor device features a unique conductive concave layer with a V-shaped cross-sectional profile.
- The conductive filling layer includes germanium or silicon germanium, enhancing conductivity.
- The innovative design of the semiconductor device allows for efficient electron flow and improved performance.
- The method for fabricating the semiconductor device involves precise layering and deposition techniques.
- The top conductive layer provides additional functionality and connectivity to the device.
Potential Applications: - High-performance electronic devices - Semiconductor manufacturing industry - Advanced computing systems
Problems Solved: - Enhanced conductivity and performance in semiconductor devices - Improved electron flow efficiency - Precise fabrication techniques for complex structures
Benefits: - Increased device performance and efficiency - Enhanced conductivity for better connectivity - Advanced technology for cutting-edge applications
Commercial Applications: Title: Advanced Semiconductor Devices for High-Performance Electronics This technology can be utilized in the production of high-performance electronic devices, leading to improved efficiency and connectivity in various industries. The market implications include advancements in semiconductor manufacturing and the development of more powerful computing systems.
Questions about Semiconductor Devices: 1. How does the V-shaped cross-sectional profile of the conductive structure impact device performance? The V-shaped profile allows for efficient electron flow and enhanced conductivity, improving overall device performance.
2. What are the advantages of using germanium or silicon germanium in the conductive filling layer? Germanium or silicon germanium in the filling layer enhance conductivity, leading to better connectivity and performance in the semiconductor device.
Original Abstract Submitted
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a conductive structure including a conductive concave layer positioned on the substrate and including a top surface having a V-shaped cross-sectional profile; and a conductive filling layer positioned on the conductive concave layer; and a top conductive layer positioned on the conductive structure. The conductive filling layer includes germanium or silicon germanium.
