18132418. SEMICONDUCTOR DEVICE WITH FILLING LAYER AND METHOD FOR FABRICATING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
Contents
SEMICONDUCTOR DEVICE WITH FILLING LAYER AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
TSE-YAO Huang of TAIPEI CITY (TW)
SEMICONDUCTOR DEVICE WITH FILLING LAYER AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18132418 titled 'SEMICONDUCTOR DEVICE WITH FILLING LAYER AND METHOD FOR FABRICATING THE SAME
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a conductive structure with a conductive concave layer on the substrate, featuring a V-shaped cross-sectional profile on its top surface; a conductive filling layer on the concave layer; and a top conductive layer on the structure, with the filling layer containing germanium or silicon germanium.
- The semiconductor device features a unique V-shaped cross-sectional profile on its conductive concave layer.
- The conductive filling layer includes germanium or silicon germanium, enhancing the device's performance.
- The method for fabricating the semiconductor device involves precise layering techniques to achieve the desired structure.
- The top conductive layer provides additional functionality and connectivity to the device.
- The use of germanium or silicon germanium in the filling layer contributes to the device's overall efficiency and effectiveness.
Potential Applications: This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as integrated circuits, sensors, and communication devices.
Problems Solved: This technology addresses the need for improved conductivity and performance in semiconductor devices, particularly in complex electronic systems.
Benefits: The semiconductor device offers enhanced performance, improved conductivity, and increased efficiency, leading to better overall functionality in electronic devices.
Commercial Applications: This technology has significant commercial potential in the semiconductor industry, particularly in the development of high-performance electronic devices for consumer electronics, telecommunications, and automotive applications.
Questions about Semiconductor Device with V-Shaped Cross-Sectional Profile: 1. How does the V-shaped cross-sectional profile of the conductive concave layer benefit the semiconductor device? The V-shaped profile enhances the device's conductivity and performance by providing a more efficient path for electrical signals.
2. What are the potential applications of semiconductor devices with germanium or silicon germanium filling layers? Semiconductor devices with these filling layers can be used in a wide range of electronic applications, including high-speed communication systems, advanced sensors, and power electronics.
Original Abstract Submitted
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a conductive structure including a conductive concave layer positioned on the substrate and including a top surface having a V-shaped cross-sectional profile; and a conductive filling layer positioned on the conductive concave layer; and a top conductive layer positioned on the conductive structure. The conductive filling layer includes germanium or silicon germanium.
