18131462. SEMICONDUCTOR STRUCTURE HAVING DIELECTRIC LINER AND METHOD OF MANUFACTURING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)

SEMICONDUCTOR STRUCTURE HAVING DIELECTRIC LINER AND METHOD OF MANUFACTURING THE SAME

Organization Name

NANYA TECHNOLOGY CORPORATION

Inventor(s)

FENG-WEN Hsu of NEW TAIPEI CITY (TW)

SEMICONDUCTOR STRUCTURE HAVING DIELECTRIC LINER AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18131462 titled 'SEMICONDUCTOR STRUCTURE HAVING DIELECTRIC LINER AND METHOD OF MANUFACTURING THE SAME

The present application introduces a semiconductor structure with a dielectric liner and a method for manufacturing this structure.

• The semiconductor structure consists of a substrate, first and second bit line structures, a polysilicon layer, a dielectric liner, and a landing pad.
• The first bit line structure includes a first conductive layer, a second conductive layer, and a first dielectric layer.
• The second bit line structure comprises a second dielectric layer, a third conductive layer, and a third dielectric layer.
• The polysilicon layer is surrounded by the first and second bit line structures.
• The dielectric liner surrounds at least a portion of the polysilicon layer.
• The landing pad is positioned over the polysilicon layer, the dielectric liner, and the second bit line structure.

Potential Applications: - Memory devices - Semiconductor manufacturing industry

Problems Solved: - Enhanced performance and reliability of semiconductor structures - Improved integration of different components in a semiconductor device

Benefits: - Increased efficiency in data storage and retrieval - Better overall functionality of semiconductor devices

Commercial Applications: Title: Advanced Semiconductor Structures for Memory Devices This technology can be utilized in the production of high-performance memory devices, catering to the growing demand for faster and more reliable data storage solutions in various industries.

Questions about the technology: 1. How does the dielectric liner contribute to the overall performance of the semiconductor structure? - The dielectric liner helps in reducing interference and enhancing the stability of the components within the semiconductor structure.

2. What are the advantages of using a polysilicon layer in this semiconductor structure? - The polysilicon layer provides a stable and conductive foundation for the components, improving the overall functionality of the semiconductor device.

Original Abstract Submitted

The present application provides a semiconductor structure having dielectric liner and a manufacturing method of the semiconductor structure. The semiconductor structure includes a substrate; a first bit line structure, disposed over the substrate, comprising a first conductive layer, a second conductive layer disposed over the first conductive layer, and a first dielectric layer disposed over the second conductive layer; a second bit line structure, disposed over the substrate, comprising a second dielectric layer, a third conductive layer disposed over the second dielectric layer, and a third dielectric layer disposed over the third conductive layer; a polysilicon layer, disposed over the substrate and surrounded by the first bit line structure and the second bit line structure; a dielectric liner, surrounding at least a portion of the polysilicon layer; and a landing pad, disposed over the polysilicon layer, the dielectric liner and the second bit line structure.