18749899. SEMICONDUCTOR STRUCTURE WITH AIR GAP IN PATTERN-DENSE REGION AND METHOD OF MANUFACTURING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
Contents
SEMICONDUCTOR STRUCTURE WITH AIR GAP IN PATTERN-DENSE REGION AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
JAR-MING Ho of TAIPEI CITY (TW)
SEMICONDUCTOR STRUCTURE WITH AIR GAP IN PATTERN-DENSE REGION AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18749899 titled 'SEMICONDUCTOR STRUCTURE WITH AIR GAP IN PATTERN-DENSE REGION AND METHOD OF MANUFACTURING THE SAME
The present disclosure introduces a semiconductor structure with multiple layers and plugs containing manganese.
- First conductive layer on substrate
- Dielectric layer above first conductive layer
- Plurality of first conductive plugs through dielectric layer
- Spacers around first conductive plugs
- Lining layer covering dielectric layer, spacers, and first conductive plugs with manganese
- Second conductive plug through lining layer
- Second conductive layer over lining layer and second plug
Potential Applications: - Semiconductor manufacturing - Electronic devices - Integrated circuits
Problems Solved: - Enhancing conductivity - Improving performance of semiconductor devices
Benefits: - Increased efficiency - Enhanced functionality - Better overall performance
Commercial Applications: - Semiconductor industry - Electronics manufacturing - Technology sector
Questions about Semiconductor Structure: 1. How does the use of manganese in the lining layer and plugs impact the performance of the semiconductor structure? 2. What are the specific advantages of having multiple conductive layers and plugs in this semiconductor structure?
Frequently Updated Research: - Ongoing studies on the impact of manganese in semiconductor structures - Research on optimizing the design of semiconductor devices for improved performance and efficiency.
Original Abstract Submitted
The present disclosure provides a semiconductor structure, which includes: a first conductive layer arranged over a substrate; a dielectric layer arranged over the first conductive layer; a plurality of first conductive plugs penetrating through the dielectric layer; a plurality of spacers surrounding the respective first conductive plugs; a lining layer covering the dielectric layer, the spacer and the first conductive plugs, wherein the lining layer and the first conductive plugs include manganese (Mn); a second conductive plug penetrating through the lining layer; and a second conductive layer over the lining layer and the second conductive plug.
