18605045. SEMICONDUCTOR DEVICE simplified abstract (SUMITOMO ELECTRIC INDUSTRIES, LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18605045 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of a substrate, two Field Effect Transistors (FETs), a capacitor, and wiring connecting the components.
- The first FET has a source electrode connected to a reference potential, a gate electrode connected to an input terminal, and a drain electrode.
- The second FET has a source electrode, a gate electrode, and a drain electrode connected to an output terminal, arranged in a specific direction with respect to the first FET.
- A capacitor is placed between the first and second FETs, with one end connected to the second gate electrode and the other end to a reference potential.
- A wiring connects the first drain electrode to the second source electrode.
Potential Applications: - This semiconductor device could be used in integrated circuits for various electronic devices. - It may find applications in power management systems, signal processing, and communication devices.
Problems Solved: - The device helps in controlling the flow of electrical signals between different components efficiently. - It aids in improving the overall performance and reliability of electronic systems.
Benefits: - Enhanced functionality and performance of electronic devices. - Improved signal processing capabilities. - Better power management and efficiency.
Commercial Applications: Title: Semiconductor Device for Enhanced Signal Processing This technology can be utilized in the development of advanced electronic devices such as smartphones, tablets, and computers. It can also be beneficial in the automotive industry for improving control systems and sensors.
Questions about Semiconductor Device for Enhanced Signal Processing: 1. How does the capacitor between the FETs contribute to the overall functionality of the device? 2. What are the potential implications of using this semiconductor device in power management systems?
Frequently Updated Research: Researchers are constantly exploring ways to enhance the efficiency and performance of semiconductor devices for various applications. Stay updated on the latest advancements in this field to leverage the full potential of this technology.
Original Abstract Submitted
A semiconductor device includes a substrate, a first FET (Field Effect Transistor) configured to include a first source electrode electrically connected to a first reference potential, a first gate electrode electrically connected to an input terminal, and a first drain electrode, a second FET configured to include a second source electrode, a second gate electrode, and a second drain electrode electrically connected to an output terminal, the second FET being arranged in a first direction with respect to the first FET, a first wiring configured to electrically connect the first drain electrode to the second source electrode, and s capacitor configured to be provided between the first FET and the second FET, and have a first end electrically connected to the second gate electrode and a second end electrically connected to a second reference potential.
