18580785. SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (SUMITOMO ELECTRIC INDUSTRIES, LTD.)
Contents
- 1 SILICON CARBIDE SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SILICON CARBIDE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Silicon Carbide Semiconductor Devices
- 1.13 Original Abstract Submitted
SILICON CARBIDE SEMICONDUCTOR DEVICE
Organization Name
SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor(s)
Takeyoshi Masuda of Osaka (JP)
SILICON CARBIDE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18580785 titled 'SILICON CARBIDE SEMICONDUCTOR DEVICE
Simplified Explanation
A silicon carbide semiconductor device with specific regions and pads is described in the patent application.
Key Features and Innovation
- Silicon carbide substrate with distinct regions and pads.
- Unit cells with contact regions connected to body regions.
- Gate insulating film between gate electrode and drift, body, and source regions.
- First and second semiconductor regions of different conductivity types.
- Electrical connection between source pad, contact region, and second semiconductor region.
Potential Applications
The technology can be applied in high-power electronics, automotive systems, renewable energy, and industrial equipment.
Problems Solved
This technology addresses the need for efficient and reliable semiconductor devices for various applications.
Benefits
- Improved performance and efficiency in power electronics.
- Enhanced durability and reliability in harsh environments.
- Increased energy efficiency in electric vehicles and renewable energy systems.
Commercial Applications
Commercial applications of this technology include power converters, motor drives, solar inverters, and electric vehicle power systems.
Prior Art
Readers can explore prior art related to silicon carbide semiconductor devices, gate insulating films, and semiconductor region connectivity.
Frequently Updated Research
Stay updated on the latest research in silicon carbide semiconductor technology, gate insulating materials, and semiconductor device design.
Questions about Silicon Carbide Semiconductor Devices
What are the main advantages of using silicon carbide in semiconductor devices?
Silicon carbide offers higher thermal conductivity, breakdown voltage, and switching speed compared to traditional silicon-based semiconductors, making it ideal for high-power applications.
How does the gate insulating film contribute to the performance of the semiconductor device?
The gate insulating film helps to isolate the gate electrode from the other regions of the device, ensuring proper control of the electrical conduction and enhancing overall device efficiency.
Original Abstract Submitted
A silicon carbide semiconductor device includes a silicon carbide substrate, and a gate pad and a source pad provided above a first main surface. The silicon carbide substrate includes a first region including unit cells, a second region overlapping the gate pad, and a third region continuous with the second region. Each of the unit cells includes a contact region electrically connected to a body region, and a gate insulating film provided between a gate electrode and a drift region, the body region, and a source region. The second region has a first semiconductor region of the second conductivity type. The third region has a second semiconductor region of the second conductivity type. The first semiconductor region and the second semiconductor region are continuous with each other along the first main surface. The source region, the contact region, and the second semiconductor region are electrically connected to the source pad.
