18681997. SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (SUMITOMO ELECTRIC INDUSTRIES, LTD.)
Contents
SILICON CARBIDE SEMICONDUCTOR DEVICE
Organization Name
SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor(s)
Shota Sambonsuge of Osaka (JP)
SILICON CARBIDE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18681997 titled 'SILICON CARBIDE SEMICONDUCTOR DEVICE
Simplified Explanation:
This patent application describes a silicon carbide semiconductor device with a plating film that has a first irregularity on its surface. The ratio H1/H2 is 0.10 or less, where H1 is the difference between the maximum and minimum distance of the irregularity from the substrate surface, and H2 is the minimum thickness of the plating film.
Key Features and Innovation:
- Silicon carbide semiconductor device
- Plating film with a first irregularity
- Ratio H1/H2 is 0.10 or less
Potential Applications: This technology can be used in high-power electronic devices, automotive applications, and renewable energy systems.
Problems Solved: This technology addresses issues related to improving the performance and reliability of silicon carbide semiconductor devices.
Benefits:
- Enhanced performance of semiconductor devices
- Increased reliability
- Improved efficiency in power electronics
Commercial Applications: Potential commercial applications include power electronics, electric vehicles, solar inverters, and industrial motor drives.
Questions about Silicon Carbide Semiconductor Device: 1. What are the potential challenges in manufacturing silicon carbide semiconductor devices? 2. How does the presence of irregularities on the plating film impact the overall performance of the device?
Frequently Updated Research: Ongoing research in the field of silicon carbide semiconductor devices focuses on improving material quality, device efficiency, and reliability.
Original Abstract Submitted
A silicon carbide semiconductor device includes a silicon carbide substrate having a first main surface; a first electrode formed on the first main surface; and a plating film formed on the first electrode, wherein a first irregularity is formed on a surface of the plating film, and H1/H2 is 0.10 or less, where H1 is a difference between a maximum value of a distance to a top of the first irregularity from the first main surface and a minimum value of a distance to a bottom of the first irregularity from the first main surface, and H2 is a minimum value of a thickness of the plating film.
