18218926. TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS
Organization Name
Inventor(s)
Jaewoo Jeong of Los Altos CA (US)
Tiar Ikhtiar of San Jose CA (US)
Panagiotis Charilaos Filippou of Fremont CA (US)
Chirag Garg of San Jose CA (US)
Mahesh Govind Samant of San Jose CA (US)
TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18218926 titled 'TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS
The magnetic memory device described in the patent application consists of a substrate, a seed layer, a chemical templating layer, and a first magnetic layer.
- The seed layer is made of ScN, MnN, or MgO oriented in the (001) direction.
- The chemical templating layer contains a binary alloy with a CuAu or BiF prototype structure.
- The first magnetic layer includes a Heusler compound with perpendicular magnetic anisotropy.
Potential Applications: - Data storage devices - Magnetic sensors - Spintronics applications
Problems Solved: - Enhanced magnetic memory performance - Improved data retention and stability
Benefits: - Higher data storage density - Increased data security - Improved energy efficiency
Commercial Applications: Title: Advanced Magnetic Memory Devices for Next-Generation Data Storage This technology could revolutionize the data storage industry by providing more efficient and reliable magnetic memory devices for various applications, including consumer electronics, cloud computing, and data centers.
Questions about the technology: 1. How does the orientation of the seed layer impact the performance of the magnetic memory device? The orientation of the seed layer plays a crucial role in determining the magnetic properties and stability of the device. By aligning the crystals in a specific direction, the device can achieve better performance and reliability.
2. What are the advantages of using a Heusler compound in the first magnetic layer? Heusler compounds offer unique magnetic properties, including perpendicular magnetic anisotropy, which is essential for data storage applications requiring stable and efficient magnetization control.
Original Abstract Submitted
A magnetic memory device includes a substrate, a seed layer above the substrate, a chemical templating layer above the seed layer, and a first magnetic layer above the chemical templating layer. The seed layer includes ScN, MnN, or MgO substantially oriented in (001) direction. The chemical templating layer includes a binary alloy having a CuAu prototype structure or a BiFprototype structure. The first magnetic layer includes a Heusler compound having perpendicular magnetic anisotropy.
