18218920. NITRIDE SEED LAYER WITH HIGH THERMAL STABILITY FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

NITRIDE SEED LAYER WITH HIGH THERMAL STABILITY FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jaewoo Jeong of San Jose CA (US)

Tiar Ikhtiar of San Jose CA (US)

Panagiotis Charilaos Filippou of Fremont CA (US)

Chirag Garg of San Jose CA (US)

See-Hun Yang of Morgan Hill CA (US)

Mahesh Govind Samant of San Jose CA (US)

NITRIDE SEED LAYER WITH HIGH THERMAL STABILITY FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18218920 titled 'NITRIDE SEED LAYER WITH HIGH THERMAL STABILITY FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS

The magnetic memory device described in the patent application consists of a substrate, a thermally stable nitride seed layer oriented in a (001) direction, a chemical templating layer made of a binary alloy with a CsCl prototype structure, and a magnetic layer containing a Heusler compound with perpendicular magnetic anisotropy (PMA).

• The substrate provides a base for the layers of the memory device.
• The thermally stable nitride seed layer is crucial for maintaining orientation and stability.
• The chemical templating layer aids in the formation of the magnetic layer.
• The magnetic layer with PMA ensures efficient data storage and retrieval.
• The combination of these layers results in a high-performance magnetic memory device.

Potential Applications: - Data storage in electronic devices - Magnetic sensors - Magnetic random-access memory (MRAM) technology

Problems Solved: - Enhanced stability and orientation of magnetic memory devices - Improved data storage efficiency - Increased reliability in magnetic data storage

Benefits: - Higher data storage capacity - Faster data access speeds - Long-lasting performance

Commercial Applications: Title: Advanced Magnetic Memory Devices for Next-Generation Electronics This technology can be utilized in various electronic devices, such as smartphones, computers, and IoT devices, to enhance data storage capabilities and overall performance. The market implications include increased demand for efficient data storage solutions in the electronics industry.

Questions about Magnetic Memory Devices: 1. How does the CsCl prototype structure in the chemical templating layer contribute to the functionality of the magnetic memory device? The CsCl prototype structure helps in organizing the atoms in a specific manner, facilitating the growth of the magnetic layer with the desired properties.

2. What advantages does perpendicular magnetic anisotropy (PMA) offer in magnetic memory devices? PMA ensures that the magnetic moments are aligned perpendicular to the plane of the device, leading to more stable data storage and faster read/write operations.

Original Abstract Submitted

A magnetic memory device includes a substrate, a thermally stable nitride seed layer substantially oriented in a (001) direction above the substrate, a chemical templating layer above the thermally stable nitride seed layer, and a magnetic layer above the chemical templating layer. The chemical templating layer includes a binary alloy having a CsCl prototype structure, and the magnetic layer includes a Heusler compound having perpendicular magnetic anisotropy (PMA).