18505152. MAGNETIC MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
MAGNETIC MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
BYOUNG JAE Bae of Suwon-si (KR)
MAGNETIC MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18505152 titled 'MAGNETIC MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
Simplified Explanation: The patent application describes a magnetic memory device and a method for making it. The device includes layers of magnetic patterns and insulating materials on a substrate, along with a re-deposition insertion layer.
- The magnetic memory device includes a substrate, lower insulating layer, memory cell with magnetic patterns, tunnel barrier pattern, and re-deposition insertion layer.
- The re-deposition insertion layer consists of a re-deposition insulating layer, mixed layer, and re-deposition byproduct layer.
- The mixed layer contains materials from both the re-deposition insulating layer and the re-deposition byproduct layer.
Potential Applications: This technology can be used in various electronic devices requiring non-volatile memory storage, such as computers, smartphones, and IoT devices.
Problems Solved: This technology addresses the need for efficient and reliable magnetic memory devices with improved performance and durability.
Benefits: The magnetic memory device offers enhanced data storage capabilities, faster access times, and increased longevity compared to traditional memory technologies.
Commercial Applications: Potential commercial applications include the production of high-performance solid-state drives, magnetic random-access memory modules, and other data storage solutions for consumer electronics and industrial applications.
Prior Art: Readers can explore prior art related to magnetic memory devices, tunnel barrier patterns, and re-deposition insertion layers in the field of semiconductor memory technologies.
Frequently Updated Research: Researchers are continually exploring advancements in magnetic memory technologies, including new materials, fabrication techniques, and performance optimizations.
Questions about Magnetic Memory Devices: 1. How does the re-deposition insertion layer contribute to the performance of the magnetic memory device? 2. What are the key advantages of using magnetic patterns in memory cells compared to other types of memory technologies?
Original Abstract Submitted
A magnetic memory device and a method for fabricating the same are provided. The magnetic memory device includes a substrate, a lower insulating layer on the substrate, a memory cell including a first magnetic pattern, a tunnel barrier pattern and a second magnetic pattern, which are sequentially stacked on the lower insulating layer, and a re-deposition insertion layer extending along an upper surface of the lower insulating layer from a side of the memory cell, wherein the re-deposition insertion layer includes a re-deposition insulating layer, a mixed layer and a re-deposition byproduct layer, which are sequentially stacked on the lower insulating layer, and the mixed layer includes both a material included in the re-deposition insulating layer and a material included in the re-deposition byproduct layer.
