18370949. SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Moorym Choi of Suwon-si (KR)

Sunil Shim of Suwon-si (KR)

Seungwoo Paek of Suwon-si (KR)

Jimin Lee of Suwon-si (KR)

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18370949 titled 'SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE

Simplified Explanation:

The semiconductor device described in the patent application consists of bonded circuit and cell regions. The cell region includes a substrate, a base memory portion, and a bonding memory portion. The base memory portion has a first gate stacking structure with first and second surfaces, a first channel structure penetrating the first gate stacking structure, and a base bonding pad connected to the first channel structure on the second surface. The bonding memory portion includes a second gate stacking structure bonded to the base memory portion and the circuit region, a second channel structure penetrating the second gate stacking structure, a first bonding pad connected to the second channel structure on the third surface, and a second bonding pad connected to the second channel structure on the fourth surface.

Key Features and Innovation:

  • Integration of base memory portion and bonding memory portion in a semiconductor device
  • Use of gate stacking structures and channel structures for memory and bonding connections
  • Efficient design for connecting different regions of the semiconductor device

Potential Applications: The technology described in the patent application could be applied in:

  • Memory devices
  • Integrated circuits
  • Semiconductor manufacturing

Problems Solved: This technology addresses:

  • Efficient bonding and memory connections in semiconductor devices
  • Compact design for improved performance
  • Enhanced integration of different regions in a semiconductor device

Benefits:

  • Improved functionality and performance of semiconductor devices
  • Enhanced connectivity between memory and circuit regions
  • Compact design for space-saving in electronic devices

Commercial Applications: Potential commercial uses include:

  • Memory chips
  • Microprocessors
  • Consumer electronics

Prior Art: Readers interested in prior art related to this technology can explore:

  • Semiconductor device design patents
  • Memory integration technologies
  • Circuit bonding innovations

Frequently Updated Research: Stay updated on the latest research in:

  • Semiconductor device integration
  • Memory and circuit connectivity advancements

Questions about Semiconductor Device Integration: 1. How does the integration of base and bonding memory portions improve semiconductor device performance? 2. What are the key advantages of using gate stacking structures in memory connections?


Original Abstract Submitted

A semiconductor device includes bonded circuit and cell regions. The cell region includes a substrate, a base memory portion, and a bonding memory portion. Here, base memory portion includes a first gate stacking structure on the substrate and having first and second surfaces, a first channel structure penetrating the first gate stacking structure, and a base bonding pad on the second surface and connected to the first channel structure. The bonding memory portion includes a second gate stacking structure having a third surface bonded to the base memory portion and a fourth surface bonded to the circuit region, a second channel structure penetrating the second gate stacking structure, a first bonding pad connected to the second channel structure in the third surface and bonded to the base bonding pad, and a second bonding pad connected to the second channel structure in the fourth surface and bonded to the circuit region.