18521629. CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
Organization Name
Inventor(s)
Hyungsuk Jung of Suwon-si (KR)
CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18521629 titled 'CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
Simplified Explanation: The patent application describes a capacitor with a unique dielectric layer that includes a ferroelectric layer and an auxiliary portion with a specific energy band gap.
Key Features and Innovation:
- Capacitor with first and second electrodes and a dielectric layer.
- Dielectric layer includes a ferroelectric layer and an auxiliary portion.
- Energy band gap of the auxiliary portion is lower than 4.0 eV.
Potential Applications: This technology could be used in various electronic devices requiring capacitors with specific energy band gaps.
Problems Solved: This innovation addresses the need for capacitors with tailored energy band gaps for specific electronic applications.
Benefits:
- Improved performance in electronic devices.
- Enhanced efficiency and functionality.
- Customizable energy band gaps for different applications.
Commercial Applications: Potential commercial applications include consumer electronics, telecommunications equipment, and industrial machinery where capacitors with specific energy band gaps are required.
Questions about Capacitors with Unique Dielectric Layers: 1. What are the potential implications of using capacitors with lower energy band gaps in electronic devices? 2. How does the inclusion of an auxiliary portion with a lower energy band gap impact the overall performance of the capacitor?
Original Abstract Submitted
A capacitor according to at least one embodiment may include a first electrode and a second electrode spaced apart from each other, and a dielectric layer disposed between the first electrode and the second electrode and including a ferroelectric layer and an auxiliary portion disposed in the ferroelectric layer, wherein an energy band gap Eg of the auxiliary portion may be lower than about 4.0 eV.
