18432408. GATE STRUCTURE AND METHOD OF FORMING THE SAME, SEMICONDUCTOR DEVICE INCLUDING THE GATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
GATE STRUCTURE AND METHOD OF FORMING THE SAME, SEMICONDUCTOR DEVICE INCLUDING THE GATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Byounghoon Lee of Suwon-si (KR)
GATE STRUCTURE AND METHOD OF FORMING THE SAME, SEMICONDUCTOR DEVICE INCLUDING THE GATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18432408 titled 'GATE STRUCTURE AND METHOD OF FORMING THE SAME, SEMICONDUCTOR DEVICE INCLUDING THE GATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME
The abstract describes a gate structure in a semiconductor device, consisting of a first conductive pattern, a second conductive pattern made of doped polysilicon, and a gate insulation pattern on the sidewalls of both patterns. A capping layer containing metal grains is located beneath the first conductive pattern, with at least one metal grain extending from the upper surface of the capping layer to the lower surface of the second conductive pattern.
- The gate structure in the semiconductor device includes a first conductive pattern, a second conductive pattern made of doped polysilicon, and a gate insulation pattern on the sidewalls of both patterns.
- A capping layer, containing metal grains, is positioned beneath the first conductive pattern.
- At least one metal grain extends from the upper surface of the capping layer to the lower surface of the second conductive pattern, providing contact between the two surfaces.
Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices. - It can enhance the performance and efficiency of integrated circuits.
Problems Solved: - Improved conductivity and insulation properties in gate structures. - Enhanced contact between different layers in semiconductor devices.
Benefits: - Increased functionality and reliability of semiconductor devices. - Enhanced performance and efficiency of integrated circuits.
Commercial Applications: Title: Advanced Gate Structure Technology for Semiconductor Devices This technology can be utilized in the production of high-performance electronic devices, leading to improved market competitiveness and technological advancements in the semiconductor industry.
Questions about Gate Structure Technology: 1. How does the presence of metal grains in the capping layer enhance the performance of the gate structure? 2. What are the specific advantages of using doped polysilicon in the second conductive pattern of the gate structure?
Original Abstract Submitted
A gate structure may include a first conductive pattern, a second conductive pattern on the first conductive pattern and including polysilicon doped with impurities, and a gate insulation pattern on sidewalls of the first and second conductive patterns. A capping layer including a semiconductor material or an insulating material may be disposed under the first conductive pattern. The first conductive pattern may include metal grains. At least one of the metal grains may extend from an upper surface of the capping layer to a lower surface of the second conductive pattern, and may contact the upper surface of the capping layer and the lower surface of the second conductive pattern.
