18529551. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
JAE HYUN Kang of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18529551 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
The semiconductor device described in the patent application includes a substrate with first and second active regions separated by a boundary, a device isolation layer in a trench between the active regions, gate electrodes, source/drain patterns, and active contacts.
- The device isolation layer features a protrusion structure adjacent to the boundary between the first and second active regions.
- The first and second active regions each have a channel pattern and a source/drain pattern.
- Gate electrodes are positioned on the channel patterns and extend across the active regions.
- Active contacts are located on the source/drain patterns.
Potential Applications: - This semiconductor device could be used in various electronic devices such as smartphones, tablets, and computers. - It may find applications in the automotive industry for advanced driver assistance systems and electric vehicles.
Problems Solved: - The protrusion structure in the device isolation layer helps in reducing crosstalk between the first and second active regions. - The design of the semiconductor device enhances overall performance and efficiency.
Benefits: - Improved isolation between active regions leads to better device performance. - Enhanced reliability and longevity of the semiconductor device. - Potential for increased speed and efficiency in electronic devices.
Commercial Applications: - The technology could be valuable for semiconductor manufacturers looking to produce high-performance devices for consumer electronics and automotive applications.
Questions about the Technology: 1. How does the protrusion structure in the device isolation layer contribute to reducing crosstalk between active regions? 2. What are the specific advantages of having gate electrodes that extend across the active regions?
Frequently Updated Research: - Stay updated on advancements in semiconductor manufacturing techniques and materials that could further enhance the performance of devices like the one described in the patent application.
Original Abstract Submitted
A semiconductor device is provided. The semiconductor device includes: a substrate including first and second active regions wherein a boundary is provided between the first and second active regions, a device isolation layer on the substrate in a trench between the first and second active regions, a first channel pattern and a first source/drain pattern on the first active region, a second channel pattern and a second source/drain pattern on the second active region, a first gate electrode on the first channel pattern and extending across the first active regions, a second gate electrode on the second channel pattern and extending across the second active regions, and active contacts on the first and second source/drain patterns. The device isolation layer includes a protrusion structure between the first active regions. The protrusion structure is adjacent to the boundary.
