18232549. ELEMENTAL DOPING OF HIGH-K DIELECTRIC OXIDE TO CREATE P-TYPE CONDUCTIVITY IN THIN LAYER CHANNELS VIA SURFACE CHARGE TRANSFER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
ELEMENTAL DOPING OF HIGH-K DIELECTRIC OXIDE TO CREATE P-TYPE CONDUCTIVITY IN THIN LAYER CHANNELS VIA SURFACE CHARGE TRANSFER
Organization Name
Inventor(s)
Nikhil Sivadas of Boston MA (US)
Yongwoo Shin of Concord MA (US)
Mahdi Amachraa of Cambridge MA (US)
ELEMENTAL DOPING OF HIGH-K DIELECTRIC OXIDE TO CREATE P-TYPE CONDUCTIVITY IN THIN LAYER CHANNELS VIA SURFACE CHARGE TRANSFER - A simplified explanation of the abstract
This abstract first appeared for US patent application 18232549 titled 'ELEMENTAL DOPING OF HIGH-K DIELECTRIC OXIDE TO CREATE P-TYPE CONDUCTIVITY IN THIN LAYER CHANNELS VIA SURFACE CHARGE TRANSFER
Simplified Explanation: The patent application describes a structure with a p-doped thin layer and an oxide high-k gate dielectric layer doped with various elements within specific limits. Another structure includes a p-doped transition metal dichalcogenide layer with a binary oxide high-k gate dielectric layer doped with specific elements within certain limits. The method for p-doping a thin layer involves doping an oxide high-k gate dielectric layer with specific elements to p-dope the thin layer through surface charge transfer doping.
- The structure includes a p-doped thin layer and an oxide high-k gate dielectric layer doped with specific elements within certain limits.
- Another structure involves a p-doped transition metal dichalcogenide layer with a binary oxide high-k gate dielectric layer doped with specific elements within certain limits.
- The method for p-doping a thin layer utilizes surface charge transfer doping by doping an oxide high-k gate dielectric layer with specific elements.
Potential Applications: This technology could be applied in semiconductor devices, integrated circuits, and other electronic components that require precise doping for optimal performance.
Problems Solved: This technology addresses the need for controlled doping in thin layers to enhance the functionality and efficiency of electronic devices.
Benefits: The precise doping of thin layers can improve the performance, speed, and reliability of semiconductor devices, leading to enhanced overall functionality.
Commercial Applications: Title: Advanced Semiconductor Doping Technology for Enhanced Electronic Devices This technology could be utilized in the manufacturing of advanced electronic devices, leading to improved performance and reliability in various industries such as telecommunications, computing, and consumer electronics.
Prior Art: Readers can explore prior research on semiconductor doping techniques, thin film technology, and surface charge transfer doping to understand the background of this innovation.
Frequently Updated Research: Researchers are continually exploring new materials and methods for doping thin layers in semiconductor devices to enhance their performance and efficiency.
Questions about Semiconductor Doping Technology: 1. How does surface charge transfer doping differ from traditional doping methods?
- Surface charge transfer doping involves transferring charges to the surface of a material to modify its properties, while traditional doping methods involve introducing impurities into the bulk of the material.
2. What are the key challenges in achieving precise doping in thin layers for semiconductor devices?
- Achieving precise doping in thin layers requires careful control of the dopant concentration and distribution, as well as the selection of suitable dopant materials.
Original Abstract Submitted
A structure includes a p-doped thin layer and an oxide high-k gate dielectric layer doped with Cd, As, Cr, Pd, Sc, V, Sn, Mo, Mn, Ti, Ge, Ag, Ni, In, or Ga within a fractional (x) limit 0<x<0.25, wherein the thin layer has a thickness of 10 nm or less, and another structure includes a p-doped transition metal dichalcogenide layer with a binary oxide high-k gate dielectric layer doped with V, Sn, Mo, Mn, Ti, Ge, Ag, Ni, In, or Ga within a fractional (x) limit 0<x<0.2. A method for p-doping a thin layer includes doping an oxide high-k gate dielectric layer with Cd, As, Cr, Pd, Sc, V, Sn, Mo, Mn, Ti, Ge, Ag, Ni, In, or Ga within a fractional (x) limit 0<x<0.25 to thereby p-dope the thin layer by surface charge transfer doping, wherein the thin layer has a thickness of 10 nm or less.
