18512322. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Hyungjin Park of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18512322 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
The semiconductor device described in the abstract consists of a substrate with an active pattern, first and second semiconductor patterns, a source/drain pattern, a gate electrode, and a gate insulating pattern.
- The first and second semiconductor patterns are vertically spaced apart on the active pattern.
- The source/drain pattern is connected to the first and second semiconductor patterns.
- The gate electrode is positioned between the first and second semiconductor patterns.
- The gate insulating pattern encloses the gate electrode and includes a high-k dielectric pattern, an inner spacer, and a mask insulating pattern.
- The inner spacer is located between the high-k dielectric pattern and the source/drain pattern.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It can improve the performance and efficiency of integrated circuits in electronic devices.
Problems Solved: - This technology addresses the need for high-performance semiconductor devices with improved gate insulating patterns. - It solves the challenge of reducing leakage currents and enhancing overall device performance.
Benefits: - Enhanced performance and efficiency of semiconductor devices. - Improved reliability and durability of integrated circuits. - Potential for smaller and more powerful electronic devices.
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Performance This technology can be utilized in the production of smartphones, tablets, laptops, and other consumer electronics. It can also benefit the automotive industry for advanced driver assistance systems and autonomous vehicles.
Questions about the Technology: 1. How does the high-k dielectric pattern improve the performance of the semiconductor device? 2. What are the specific advantages of having an inner spacer in the gate insulating pattern?
Frequently Updated Research: Researchers are continuously exploring new materials and designs for gate insulating patterns to further enhance the performance of semiconductor devices. Stay updated on the latest advancements in high-k dielectric materials and semiconductor manufacturing processes.
Original Abstract Submitted
A semiconductor device including a substrate having an active pattern, first and second semiconductor patterns provided on the active pattern vertically spaced apart from each other, a source/drain pattern connected to the first and second semiconductor patterns, a gate electrode between the first and second semiconductor patterns, and a gate insulating pattern enclosing the gate electrode, wherein the gate insulating pattern includes, a high-k dielectric pattern enclosing the gate electrode, an inner spacer between the high-k dielectric pattern and the source/drain pattern, and a mask insulating pattern having an etch selectivity with respect to the inner spacer between the high-k dielectric pattern and the inner spacer.
