18633791. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Youngsoo Song of SUWON-SI (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18633791 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes various components such as an active region, active pattern, device isolation layer, gate structure, source/drain region, interlayer insulating layer, contact structure, buried conductive structure, and power delivery structure.
- The active region is located on a substrate, while the active pattern extends in a first direction.
- The device isolation layer surrounds the active pattern to separate it from other components.
- The gate structure extends in a second direction, controlling the flow of current in the device.
- The source/drain region is on the active pattern, providing a path for current to enter or exit.
- An interlayer insulating layer covers the source/drain region to prevent electrical interference.
- The contact structure is connected to the source/drain region for external connections.
- A buried conductive structure extends in the first direction, passing through the interlayer insulating layer.
- The buried conductive structure is electrically connected to the contact structure and the power delivery structure.
- The power delivery structure extends from the lower surface of the substrate towards the upper surface, providing power to the device.
- The buried conductive structure includes a body portion and an extension portion for efficient power delivery.
Potential Applications: - This technology can be used in various semiconductor devices such as integrated circuits, microprocessors, and memory chips. - It can also be applied in power management systems, sensors, and communication devices.
Problems Solved: - Improved power delivery efficiency and reliability in semiconductor devices. - Enhanced performance and functionality of electronic devices. - Better integration of components for compact and efficient designs.
Benefits: - Increased power delivery capabilities. - Enhanced device performance and reliability. - Improved overall efficiency and functionality of electronic systems.
Commercial Applications: - This technology has potential commercial applications in the semiconductor industry for developing advanced electronic devices with improved power management capabilities. - It can also be utilized in consumer electronics, automotive systems, and industrial automation for enhanced performance and reliability.
Questions about the technology: 1. How does the buried conductive structure improve power delivery efficiency in semiconductor devices? 2. What are the potential implications of integrating the buried conductive structure in electronic systems?
Original Abstract Submitted
A semiconductor device includes an active region on a substrate and an active pattern extending in a first direction. A device isolation layer surrounds the active pattern. A gate structure extends in a second direction. A source/drain region is on the active pattern. An interlayer insulating layer covers the source/drain region. A contact structure is connected to the source/drain region. A buried conductive structure extends in the first direction, is electrically connected to the contact structure, and passes through the interlayer insulating layer to extend in a third direction. A power delivery structure extends from a lower surface of the substrate towards an upper surface thereof, and is electrically connected to the buried conductive structure. The buried conductive structure includes a body portion extending in the first direction, and an extension portion extending from a region of at least one side surface of the body portion in the second direction.
