18348087. FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS ON TOP OF A TUNNEL BARRIER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS ON TOP OF A TUNNEL BARRIER
Organization Name
Inventor(s)
Jaewoo Jeong of Los Altos CA (US)
Tiar Ikhtiar of San Jose CA (US)
Panagiotis Charilaos Filippou of San Jose CA (US)
Chirag Garg of San Jose CA (US)
Mahesh Govind Samant of San Jose CA (US)
FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS ON TOP OF A TUNNEL BARRIER - A simplified explanation of the abstract
This abstract first appeared for US patent application 18348087 titled 'FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS ON TOP OF A TUNNEL BARRIER
Simplified Explanation:
The patent application describes a magnetic random-access memory (MRAM) device with specific layers and structures to enhance its performance.
- The device includes a substrate, a bottom magnetic reference layer, a tunnel barrier layer, and a top magnetic free layer.
- The top magnetic free layer has a chemical templating layer and a magnetic layer.
- The chemical templating layer consists of a binary alloy of FeX with specific composition ranges.
- The magnetic layer includes a Heusler compound with perpendicular magnetic anisotropy.
Key Features and Innovation:
- Utilization of a chemical templating layer to enhance the magnetic properties of the top free layer.
- Incorporation of specific binary alloy compositions in the chemical templating layer.
- Integration of a Heusler compound with perpendicular magnetic anisotropy in the magnetic layer.
Potential Applications:
- Data storage devices
- Magnetic sensors
- Spintronics applications
Problems Solved:
- Enhancing magnetic properties in MRAM devices
- Improving data storage and retrieval efficiency
- Increasing device reliability and performance
Benefits:
- Higher data storage density
- Faster data access speeds
- Improved device longevity
Commercial Applications:
The technology could be applied in the development of advanced data storage solutions for various industries, including telecommunications, computing, and consumer electronics.
Questions about MRAM Technology: 1. How does the chemical templating layer improve the magnetic properties of the MRAM device? 2. What advantages does the Heusler compound with perpendicular magnetic anisotropy offer in this technology?
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Original Abstract Submitted
A magnetic random-access memory (MRAM) device includes a substrate, a bottom magnetic reference layer on the substrate, a tunnel barrier layer above the bottom magnetic reference layer, and a top magnetic free layer above the tunnel barrier layer. The top magnetic free layer includes a chemical templating layer on the tunnel barrier layer and a magnetic layer on the chemical templating layer. The chemical templating layer includes a binary alloy of FeX which may have a BiFprototype structure in which y is in a range from 0.9 to 3.3, and the magnetic layer includes a Heusler compound having substantially perpendicular magnetic anisotropy.
