18412490. DRIVE CIRCUIT simplified abstract (Mitsubishi Electric Corporation)

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DRIVE CIRCUIT

Organization Name

Mitsubishi Electric Corporation

Inventor(s)

Yu Seikoba of Tokyo (JP)

Shohei Sano of Fukuoka (JP)

Yo Habu of Tokyo (JP)

DRIVE CIRCUIT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18412490 titled 'DRIVE CIRCUIT

Simplified Explanation: The patent application describes a gate driver IC that controls the operation of an IGBT by monitoring the potential of a shunt resistor and activating alarm and trigger signals accordingly.

  • The gate driver IC includes switching elements for driving the IGBT.
  • A comparator detects when the potential of the shunt resistor exceeds a certain threshold (Vth) and outputs an alarm signal.
  • A delay circuit generates a trigger signal after the alarm signal is activated.
  • The controller manages the switching elements and turns off PMOSs in the upper arm when the alarm signal is triggered, and turns on NMOSs in the lower arm when the trigger signal is generated.

Key Features and Innovation:

  • Utilizes a shunt resistor to monitor the potential in the circuit.
  • Implements a comparator to detect potential threshold exceedance and trigger an alarm signal.
  • Includes a delay circuit to generate a trigger signal after the alarm signal is activated.
  • Employs a controller to manage the switching elements based on the alarm and trigger signals.

Potential Applications:

  • Industrial motor control systems.
  • Renewable energy systems.
  • Electric vehicle powertrains.

Problems Solved:

  • Ensures safe operation of the IGBT by monitoring potential levels.
  • Prevents potential damage or malfunction by activating alarm and trigger signals.
  • Enhances overall system reliability.

Benefits:

  • Improved safety in high-power applications.
  • Enhanced protection for critical components.
  • Increased system efficiency and reliability.

Commercial Applications: Electric Vehicle Powertrain Safety System: Implementing this gate driver IC in electric vehicle powertrains can enhance safety and reliability, ensuring optimal performance and protection for critical components.

Questions about Gate Driver IC Technology: 1. How does the gate driver IC monitor the potential of the shunt resistor? 2. What are the specific benefits of using PMOSs in the upper arm and NMOSs in the lower arm of the gate driver IC?


Original Abstract Submitted

A gate driver IC includes a plurality of switching elements that drives an IGBT; a comparator that outputs an alarm signal in a case where a potential of a shunt resistor connected between an emitter terminal of the IGBT and a ground is equal to or higher than a Vth; a delay circuit that outputs a trigger signal after the comparator starts outputting the alarm signal; and a controller that controls on and off of the plurality of switching elements. The switching elements of an upper arm include PMOSs connected to a same voltage source. The switching elements of a lower arm include NMOSs. The controller turns off the PMOS when the alarm signal is output, and turns on the NMOS when the trigger signal is output.