18608917. DYNAMIC RANDOM ACCESS MEMORY (DRAM) STORAGE NODE CONTACT simplified abstract (Applied Materials, Inc.)

DYNAMIC RANDOM ACCESS MEMORY (DRAM) STORAGE NODE CONTACT

Organization Name

Applied Materials, Inc.

Inventor(s)

Sony Varghese of Manchester MA (US)

Tong Liu of San Jose CA (US)

Zhijun Chen of San Jose CA (US)

Balasubramanian Pranatharthiharan of Santa Clara CA (US)

DYNAMIC RANDOM ACCESS MEMORY (DRAM) STORAGE NODE CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18608917 titled 'DYNAMIC RANDOM ACCESS MEMORY (DRAM) STORAGE NODE CONTACT

The semiconductor structure described in the abstract consists of a first active region, a second active region, a metal plug connected to the first active region, a bit line connected to the second active region, and a bit line spacer encapsulating the bit line.

• The first and second active regions are lightly n-type doped, while the substrate is p-type doped.
• The contact layer is epitaxially grown and n-type doped with a graded doping profile increasing from the first active region interface to the interface layer.
• The innovation lies in the specific doping profiles and connections within the semiconductor structure.

Potential Applications:

• This semiconductor structure could be used in memory devices, logic circuits, and other semiconductor applications.
• It may improve the performance and efficiency of electronic devices.

Problems Solved:

• Enhances the conductivity and performance of the semiconductor structure.
• Provides a reliable and efficient connection between different active regions.

Benefits:

• Improved electrical connectivity and performance.
• Enhanced reliability and efficiency in semiconductor devices.

Commercial Applications:

• This technology could be valuable for semiconductor manufacturers looking to enhance the performance of their products.
• It may find applications in the development of advanced electronic devices.

Prior Art:

• Researchers and engineers in the field of semiconductor technology may find relevant prior art in similar structures and doping profiles used in semiconductor devices.

Frequently Updated Research:

• Stay updated on the latest advancements in semiconductor structures and doping techniques to further improve the performance of electronic devices.

Questions about Semiconductor Structures: 1. How does the graded doping profile in the contact layer impact the overall performance of the semiconductor structure? 2. What are the potential challenges in scaling up this technology for mass production?

Original Abstract Submitted

A semiconductor structure includes a first active region and a second active region on a substrate, a metal plug electrically connected to the first active region via a contact layer and an interface layer, a bit line electrically connected to the second active region via a bit line contact plug, and a bit line spacer encapsulating the bit line, wherein the first active region and the second active region are lightly n-type doped, the substrate is p-type doped, and the contact layer is epitaxially grown and n-type doped with a graded doping profile that increases from an interface with the first active region to an interface with the interface layer.