18620296. 4F2 VERTICAL ACCESS TRANSISTOR WITH REDUCED FLOATING BODY EFFECT simplified abstract (Applied Materials, Inc.)
Contents
4F2 VERTICAL ACCESS TRANSISTOR WITH REDUCED FLOATING BODY EFFECT
Organization Name
Inventor(s)
Zhijun Chen of San Jose CA (US)
Fredrick Fishburn of Aptos CA (US)
4F2 VERTICAL ACCESS TRANSISTOR WITH REDUCED FLOATING BODY EFFECT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18620296 titled '4F2 VERTICAL ACCESS TRANSISTOR WITH REDUCED FLOATING BODY EFFECT
The present technology involves vertical cell dynamic random-access memory (DRAM) array access transistors with improved hole distribution. The arrays consist of multiple bit lines in a first horizontal direction and multiple word lines in a second horizontal direction. Additionally, the arrays include channels extending vertically, intersecting the bit lines with source/drain regions and the word lines with gate regions. A p-doped bridge connects two channels, spaced apart in a row in the second horizontal direction.
- Improved hole distribution in vertical cell DRAM arrays
- Multiple bit lines and word lines arranged in different horizontal directions
- Channels extending vertically, intersecting with source/drain regions and gate regions
- P-doped bridge connecting two channels in a row
Potential Applications: - Memory storage devices - Computer systems - Data processing applications
Problems Solved: - Enhanced performance and efficiency of DRAM arrays - Improved data access and storage capabilities
Benefits: - Increased speed and reliability of memory access - Higher data storage capacity - Improved overall performance of electronic devices
Commercial Applications: Title: Enhanced Vertical Cell DRAM Arrays for Improved Memory Storage This technology can be utilized in various commercial applications such as: - Consumer electronics - Data centers - Telecommunications industry
Questions about Vertical Cell DRAM Arrays: 1. How does the improved hole distribution impact the performance of DRAM arrays?
- The improved hole distribution enhances the efficiency and speed of data access in DRAM arrays.
2. What are the potential commercial applications of vertical cell DRAM arrays?
- Vertical cell DRAM arrays can be used in consumer electronics, data centers, and the telecommunications industry.
Original Abstract Submitted
The present technology includes vertical cell dynamic random-access memory (DRAM) array access transistors with improved hole distribution. The arrays include a plurality of bit lines arranged in a first horizontal direction and a plurality of word lines arranged in a second horizontal direction. The arrays include a plurality of channels extending in a vertical direction orthogonal to the first direction and the second horizontal direction, such that the plurality of bit lines intersect with a source/drain region of the plurality of channels, and the plurality of word lines intersect with gate regions of the plurality of channels. In addition, arrays include a p-doped bridge extending between a first channel of the plurality of channels and a second channel of the plurality of channels, where the first channel is spaced apart from the second channel in a row extending in the second horizontal direction.
