18131321. Atmospheric Pressure Plasma for Substrate Annealing simplified abstract (Applied Materials, Inc.)
Contents
Atmospheric Pressure Plasma for Substrate Annealing
Organization Name
Inventor(s)
Khalid Makhamreh of Los Gatos CA (US)
Eliyahu Shlomo Dagan of Sunnyvale CA (US)
Atmospheric Pressure Plasma for Substrate Annealing - A simplified explanation of the abstract
This abstract first appeared for US patent application 18131321 titled 'Atmospheric Pressure Plasma for Substrate Annealing
The patent application describes methods and apparatus for heating a top portion of a substrate to a temperature high enough for annealing, while keeping the temperature of the substrate at a depth of greater than or equal to about 200 nm below 450°C, by contacting the substrate with a plasma at a pressure from about 300 Torr to about 1000 Torr.
- Heating a top portion of the substrate to a temperature suitable for annealing.
- Maintaining the temperature of the substrate at a depth of greater than or equal to about 200 nm below 450°C.
- Contacting the substrate with a plasma at a pressure ranging from about 300 Torr to about 1000 Torr.
Potential Applications: - Semiconductor manufacturing - Thin film deposition processes - Solar cell production
Problems Solved: - Achieving precise temperature control during annealing processes - Ensuring uniform heating of substrates with varying depths
Benefits: - Improved quality and consistency of annealed substrates - Enhanced efficiency in manufacturing processes - Cost savings through optimized heating methods
Commercial Applications: Title: Advanced Substrate Heating Technology for Semiconductor Manufacturing This technology can be utilized in semiconductor fabrication facilities to enhance the annealing process, leading to higher quality semiconductor devices and increased production efficiency.
Questions about Advanced Substrate Heating Technology: 1. How does this technology improve the annealing process in semiconductor manufacturing? - This technology allows for precise heating of substrates, ensuring optimal annealing conditions for semiconductor devices. 2. What are the potential cost-saving benefits of implementing this heating method in semiconductor fabrication? - By optimizing the annealing process, manufacturers can reduce waste and improve overall production efficiency.
Original Abstract Submitted
Methods and apparatus for contacting a substrate with a plasma at a pressure from about 300 Torr to about 1000 Torr for a period of time sufficient to heat a top portion of the substrate having a depth of less than about 200 nm, to a temperature high enough for annealing, and the temperature of the substrate at a depth of greater than or equal to about 200 nm is less than or equal to about 450° C.
