18600324. WORDLINE RECESS FORMATION AND RESULTING STRUCTURES simplified abstract (Micron Technology, Inc.)
Contents
WORDLINE RECESS FORMATION AND RESULTING STRUCTURES
Organization Name
Inventor(s)
Babak Tahmouresilerd of Boise ID (US)
Ramaswamy Ishwar Venkatanarayanan of Boise ID (US)
Purnima Narayanan of Fremont CA (US)
Sanjeev Sapra of Boise ID (US)
WORDLINE RECESS FORMATION AND RESULTING STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18600324 titled 'WORDLINE RECESS FORMATION AND RESULTING STRUCTURES
- Simplified Explanation:**
The patent application describes methods, systems, and devices for forming wordline recesses in memory devices using a wet etching process. This process involves selectively removing materials like nitrides to create uniform gate oxides.
- Key Features and Innovation:**
- Formation of wordline recesses in memory devices using wet etching process - Selective removal of materials like nitrides to shape gate oxides uniformly
- Potential Applications:**
- Memory device manufacturing - Semiconductor industry - Electronics production
- Problems Solved:**
- Achieving uniform gate oxide shapes in memory devices - Enhancing the performance and reliability of memory devices
- Benefits:**
- Improved memory device functionality - Enhanced manufacturing processes - Increased efficiency in semiconductor production
- Commercial Applications:**
- "Innovative Method for Memory Device Manufacturing Using Wet Etching Process" - Potential applications in the semiconductor industry - Market implications for memory device manufacturers
- Questions about Wordline Recess Formation:**
1. How does the wet etching process contribute to the uniformity of gate oxides in memory devices? 2. What are the specific materials that can be selectively removed using this method?
Original Abstract Submitted
Methods, systems, and devices for wordline recess formation and resulting structures are described. In some instances, aspects of a memory device may be formed using a wet etching process. For example, a wet etching process may be used to remove (e.g., etch) one or more materials (e.g., nitrides) when forming wordlines. The wet etching process may include depositing a first resist material and a second resist material to selectively remove (e.g., etch) different portions of the nitride material. Such processes may result in gate oxides of the memory device being relatively uniform in shape.
