18745872. METHODS OF FORMING MICROELECTRONIC DEVICES INCLUDING VOIDS NEIGHBORING CONDUCTIVE CONTACTS, AND RELATED ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
METHODS OF FORMING MICROELECTRONIC DEVICES INCLUDING VOIDS NEIGHBORING CONDUCTIVE CONTACTS, AND RELATED ELECTRONIC SYSTEMS
Organization Name
Inventor(s)
Darwin A. Clampitt of Wilder ID (US)
John D. Hopkins of Meridian ID (US)
Madison D. Drake of Boise ID (US)
METHODS OF FORMING MICROELECTRONIC DEVICES INCLUDING VOIDS NEIGHBORING CONDUCTIVE CONTACTS, AND RELATED ELECTRONIC SYSTEMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18745872 titled 'METHODS OF FORMING MICROELECTRONIC DEVICES INCLUDING VOIDS NEIGHBORING CONDUCTIVE CONTACTS, AND RELATED ELECTRONIC SYSTEMS
Simplified Explanation:
The microelectronic device described in the patent application consists of a stack structure with alternating conductive and insulative layers, memory cells arranged vertically through the structure, and voids separating the conductive structures.
- The device includes strings of memory cells with channel materials extending vertically through the stack structure.
- Each string of memory cells has a conductive contact structure in electrical communication with the channel material.
- Voids separate the conductive contact structures from each other, along with dielectric materials.
- The innovative design allows for efficient memory cell operation within the microelectronic device.
Key Features and Innovation:
- Stack structure with alternating conductive and insulative layers
- Strings of memory cells with channel materials extending vertically
- Conductive contact structures in communication with the memory cells
- Voids separating the conductive contact structures
- Dielectric materials for insulation
Potential Applications:
- Memory devices
- Electronic systems
- Data storage applications
Problems Solved:
- Efficient memory cell operation
- Improved vertical integration of memory cells
- Enhanced data storage capabilities
Benefits:
- Increased memory density
- Faster data access speeds
- Enhanced overall performance of electronic systems
Commercial Applications:
Potential commercial applications include:
- High-density data storage devices
- Advanced computing systems
- Memory-intensive applications in various industries
Questions about the Technology:
1. How does the vertical integration of memory cells improve the performance of the microelectronic device? 2. What are the specific advantages of using voids to separate the conductive contact structures in the stack structure?
Frequently Updated Research:
Stay informed about the latest advancements in microelectronic devices and memory technologies to understand the evolving landscape of data storage and processing.
Original Abstract Submitted
A microelectronic device comprises a stack structure comprising a vertically alternating sequence of conductive structures and insulative structures arranged in tiers, strings of memory cells vertically extending through the stack structure, the strings of memory cells individually comprising a channel material vertically extending through the stack structure, a conductive contact structure vertically overlying and in electrical communication with the channel material of a string of memory cells of the strings of memory cells, and a void laterally neighboring the conductive contact structure, the conductive contact structure separated from a laterally neighboring conductive contact structure by the void, a dielectric material, and an additional void laterally neighboring the laterally neighboring conductive contact structure. Related memory devices, electronic systems, and methods are also described.
