18460437. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18460437 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Simplified Explanation: The patent application describes semiconductor devices with memory cells that include resistive layers, selector layers, and memory layers for data storage.
- The memory cells consist of resistive layers with specific resistance, selector layers for threshold switching, and memory layers for data storage.
Key Features and Innovation:
- Memory cells with resistive layers, selector layers, and memory layers.
- Resistive layers with specific resistance and upper and lower portions.
- Selector layers for threshold switching.
- Memory layers for data storage.
Potential Applications: This technology can be used in various electronic devices requiring non-volatile memory, such as smartphones, tablets, and IoT devices.
Problems Solved: This technology addresses the need for efficient and reliable data storage in semiconductor devices.
Benefits:
- Improved data storage capabilities.
- Enhanced performance and reliability of semiconductor devices.
Commercial Applications: Potential commercial applications include the manufacturing of memory chips for consumer electronics and industrial equipment.
Prior Art: Readers can explore prior art related to resistive memory devices and threshold switching technologies in semiconductor manufacturing.
Frequently Updated Research: Stay informed about the latest advancements in resistive memory technology and semiconductor device fabrication methods.
Questions about Semiconductor Devices: 1. How does the specific resistance of the resistive layer impact the performance of the memory cell? 2. What are the potential challenges in scaling up this technology for mass production?
Original Abstract Submitted
Semiconductor devices and fabrication methods of semiconductor devices are disclosed. In an embodiment, a semiconductor device May include a plurality of memory cells, and each of the plurality of memory cells may include: a resistive layer including a material having a specific resistance and including a lower portion and an upper portion disposed over the lower portion, wherein a width of the lower portion is smaller than a width of an uppermost surface of the upper portion; a selector layer disposed over the resistive layer and structured to perform a threshold switching by exhibiting different electrically conductive states in response to an applied voltage relative to a threshold voltage; and a memory layer disposed over the selector layer and structured to store data.
