18447824. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447824 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Simplified Explanation:
The semiconductor device described in the abstract consists of a first access line, a second access line intersecting the first direction, and a memory cell connected between the two access lines with an electrode containing a dielectric barrier.
Key Features and Innovation:
- The semiconductor device includes a unique memory cell design with a dielectric barrier within the electrode.
- The device features two access lines extending in different directions, providing efficient connectivity within the device.
Potential Applications: This technology could be applied in various electronic devices such as smartphones, computers, and other digital systems requiring memory storage.
Problems Solved:
- Enhances memory cell performance and connectivity within semiconductor devices.
- Improves data storage and retrieval efficiency in electronic devices.
Benefits:
- Increased memory cell reliability and durability.
- Enhanced data processing speed and efficiency in electronic devices.
Commercial Applications: The technology could be utilized in the development of advanced electronic devices, improving their performance and memory storage capabilities, leading to increased market competitiveness.
Questions about Semiconductor Devices: 1. How does the dielectric barrier within the electrode enhance the performance of the memory cell? 2. What are the potential challenges in implementing this technology in commercial electronic devices?
Original Abstract Submitted
A semiconductor device may include: a first access line extending in a first direction; a second access line extending in a second direction intersecting the first direction; and a memory cell connected between the first access line and the second access line and including an electrode including a dielectric barrier therein.
