18747585. SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR MEMORY DEVICE simplified abstract (SK hynix Inc.)
Contents
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Dong Hwan Lee of Icheon-si Gyeonggi-do (KR)
Seo Hyun Kim of Icheon-si Gyeonggi-do (KR)
Eun Seok Choi of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18747585 titled 'SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation:
This patent application describes a semiconductor memory device with a unique structure, including a channel layer, gate stacked structure, and semiconductor layers of different conductivity types.
- The semiconductor memory device has a channel layer with two portions, a gate stacked structure surrounding one portion, and semiconductor layers of different conductivity types.
- The first portion of the channel layer is surrounded by a gate stacked structure.
- The second portion of the channel layer contacts a first semiconductor layer of a first conductivity type.
- The device also includes a second semiconductor layer of a second conductivity type.
Key Features and Innovation:
- Unique channel layer design with two distinct portions.
- Gate stacked structure for enhanced performance.
- Combination of semiconductor layers with different conductivity types for improved functionality.
Potential Applications:
This technology could be used in various memory devices, such as flash memory, to enhance performance and reliability.
Problems Solved:
This technology addresses the need for improved semiconductor memory devices with enhanced functionality and performance.
Benefits:
- Improved performance and reliability in memory devices.
- Enhanced functionality due to unique design features.
Commercial Applications:
Potential commercial applications include the manufacturing of high-performance memory devices for consumer electronics, data storage systems, and other electronic devices.
Questions about Semiconductor Memory Devices:
1. What are the key components of a semiconductor memory device? 2. How does the unique channel layer design in this patent application contribute to the device's performance?
Original Abstract Submitted
A semiconductor memory device and a method of manufacturing the semiconductor memory device are provided. The semiconductor memory device includes a channel layer with a first portion and a second portion, the first portion and the second portion extending in a longitudinal direction, a gate stacked structure surrounding the first portion of the channel layer, a first semiconductor layer of a first conductivity type that contacts the second portion of the channel layer, and a second semiconductor layer of a second conductivity type.
