18746954. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR MEMORY DEVICE simplified abstract (SK hynix Inc.)
Contents
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Nam Jae Lee of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18746954 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the patent application includes a complex structure involving a gate stacked body, insulating layers, source layers, channel layers, and memory patterns.
- The device features a gate stacked body with an insulating layer overlapping it.
- A first source layer includes a horizontal portion and a protrusion that penetrates the insulating layer.
- A channel layer extends into the horizontal portion of the first source layer and penetrates the gate stacked body.
- A first memory pattern is located between the channel layer and the gate stacked body.
- A second source layer is positioned between the gate stacked body and the first source layer, coming in contact with the channel layer.
Potential Applications: - This technology can be used in various semiconductor memory devices such as flash memory and DRAM. - It can also be applied in other electronic devices requiring high-density memory storage.
Problems Solved: - The innovation addresses the need for increased memory density and performance in semiconductor devices. - It provides a solution for enhancing the efficiency of data storage and retrieval processes.
Benefits: - Improved memory capacity and speed in semiconductor devices. - Enhanced overall performance and reliability of electronic systems utilizing this technology.
Commercial Applications: - The technology can be utilized in the production of high-performance computers, smartphones, and other consumer electronics. - It has potential applications in the automotive industry for advanced driver-assistance systems and infotainment systems.
Questions about the technology: 1. How does this semiconductor memory device compare to existing memory technologies in terms of performance and efficiency? 2. What are the potential challenges in manufacturing and implementing this complex memory structure in commercial devices?
Frequently Updated Research: - Researchers are continuously exploring ways to further optimize the design and fabrication processes of semiconductor memory devices to enhance their performance and reliability.
Original Abstract Submitted
A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a gate stacked body, an insulating layer overlapping the gate stacked body, a first source layer including a horizontal portion between the gate stacked body and the insulating layer and a protrusion extending from the horizontal portion so as to penetrate the insulating layer, a channel layer penetrating the gate stacked body and extending into the horizontal portion of the first source layer, a first memory pattern between the channel layer and the gate stacked body, and a second source layer disposed between the gate stacked body and the first source layer and coming in contact with the channel layer.
