18460601. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
Contents
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Gil Seop Kim of Gyeonggi-do (KR)
Seung Hwan Kim of Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18460601 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
The semiconductor device described in the abstract consists of a lower structure with stacked first and second cell isolation layers, each containing a void, a horizontal layer between the isolation layers, horizontal conductive lines, a vertical conductive line, and a data storage element.
- The device features stacked cell isolation layers with voids for improved performance.
- Horizontal and vertical conductive lines facilitate data transfer and storage within the device.
- The data storage element includes electrodes for efficient data storage and retrieval.
Potential Applications: - This technology can be used in memory devices, such as non-volatile memory or flash memory. - It can also be applied in integrated circuits for various electronic devices.
Problems Solved: - The device addresses the need for efficient data storage and transfer in semiconductor devices. - It provides a compact and reliable solution for memory applications.
Benefits: - Improved performance and reliability in data storage and transfer. - Enhanced efficiency in semiconductor devices. - Compact design for space-saving applications.
Commercial Applications: Title: Advanced Semiconductor Device for Memory Applications This technology can be utilized in the development of high-performance memory devices for consumer electronics, data storage systems, and computing devices. The compact design and efficient data storage capabilities make it a valuable asset in the semiconductor industry.
Questions about the technology: 1. How does the void in the cell isolation layers contribute to the device's performance? 2. What are the specific advantages of using horizontal and vertical conductive lines in this semiconductor device?
Original Abstract Submitted
A semiconductor device includes: a lower structure; a first cell isolation layer and a second cell isolation layer stacked in a direction perpendicular to the lower structure and each including a void; a horizontal layer disposed between the first cell isolation layer and the second cell isolation layer; a first horizontal conductive line disposed between the first cell isolation layer and the horizontal layer, and a second horizontal conductive line disposed between the second cell isolation layer and the horizontal layer; a vertical conductive line coupled to a first side of the horizontal layer; and a data storage element including a first electrode coupled to a second side of the horizontal layer, and disposed between the first cell isolation layer and the second cell isolation layer.
