18460593. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
Contents
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Seung Hwan Kim of Gyeonggi-do (KR)
Seok Pyo Song of Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18460593 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
The method described in the patent application involves fabricating a semiconductor device by forming a stack body with sacrificial layer structures and preliminary horizontal layers, then adding a main hard mask layer and a mesh-shaped hard mask pattern.
- The main hard mask layer is etched using the mesh-shaped hard mask pattern to create a main hard mask pattern.
- Isolation openings are formed by etching the stack body using the main hard mask pattern as a barrier.
- Isolation layers are then added to fill the isolation openings.
This innovative process allows for precise patterning and isolation in semiconductor device fabrication.
Potential Applications: - Semiconductor manufacturing - Integrated circuit production - Electronics industry
Problems Solved: - Improving precision in semiconductor device fabrication - Enhancing isolation capabilities in semiconductor structures
Benefits: - Increased efficiency in manufacturing processes - Improved performance and reliability of semiconductor devices
Commercial Applications: Title: Advanced Semiconductor Device Fabrication Method This technology can be applied in the production of various electronic devices, leading to more reliable and high-performance products. The market implications include improved competitiveness for companies in the semiconductor industry.
Prior Art: Readers can explore prior research on semiconductor device fabrication methods, advanced patterning techniques, and isolation technologies to gain a deeper understanding of the field.
Frequently Updated Research: Researchers are continually exploring new materials and techniques to further enhance semiconductor device fabrication processes. Stay updated on the latest advancements in the industry.
Questions about Semiconductor Device Fabrication: 1. How does this method compare to traditional semiconductor fabrication processes? This method offers improved precision and isolation capabilities compared to traditional processes, leading to more advanced semiconductor devices.
2. What are the potential challenges in implementing this fabrication method on an industrial scale? Implementing this method on an industrial scale may require optimization of equipment and processes to ensure consistent and reliable results.
Original Abstract Submitted
A method for fabricating a semiconductor device includes: forming a stack body including first sacrificial layer structures, preliminary horizontal layers, and second sacrificial layer structures over a lower structure; forming a main hard mask layer over the stack body; forming a mesh-shaped hard mask pattern over the main hard mask layer; forming a main hard mask pattern by etching the main hard mask layer using the mesh-shaped hard mask pattern as an etch barrier; forming a plurality of isolation openings by etching the stack body using the main hard mask pattern as an etch barrier; and forming a plurality of isolation layers that fill the isolation openings.
