18747616. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Nam Jae Lee of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18747616 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of a stacked structure with alternating layers of conductive and insulating materials, second conductive layers on top, first openings passing through the layers, second conductive patterns, data storage patterns, and channel layers.
- Stacked structure with alternating conductive and insulating layers
- Second conductive layers on top of the stacked structure
- First openings passing through the layers with a first width
- Second conductive patterns formed in the first openings
- Data storage patterns located under the second conductive patterns
- Channel layers formed in the data storage patterns and second conductive patterns
Potential Applications: - Memory devices - Data storage systems - Semiconductor manufacturing
Problems Solved: - Efficient data storage and retrieval - Enhanced semiconductor device performance
Benefits: - Increased data storage capacity - Improved device functionality - Enhanced data processing speed
Commercial Applications: Title: "Advanced Semiconductor Memory Devices for High-Speed Data Processing" This technology can be utilized in: - Consumer electronics - Data centers - Telecommunications industry
Questions about the technology: 1. How does the stacked structure improve the performance of the semiconductor device? 2. What are the advantages of having channel layers in the data storage patterns and conductive layers?
Original Abstract Submitted
A semiconductor device includes a stacked structure with first conductive layers and insulating layers that are stacked alternately with each other, second conductive layers located on the stacked structure, first openings passing through the second conductive layers and the stacked structure and having a first width, second conductive patterns formed in the first openings and located on the stacked structure to be electrically coupled to the second conductive layers, data storage patterns formed in the first openings and located under the second conductive patterns, and channel layers formed in the data storage patterns and the second conductive patterns.
