18460473. SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jeong Hwan Song of Icheon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18460473 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a memory cell array with multiple first and second conductive lines intersecting at memory cell locations. It also features drivers for the conductive lines, resistors in series with the first conductive lines, and switching elements to control the conductive paths.
- Memory cell array with intersecting conductive lines
- Drivers for the conductive lines
- Resistors in series with first conductive lines
- Switching elements to control conductive paths
Potential Applications: - Memory storage devices - Integrated circuits - Computer hardware
Problems Solved: - Efficient data storage and retrieval - Improved performance of memory devices - Enhanced functionality of semiconductor devices
Benefits: - Faster data processing - Higher storage capacity - Increased reliability of memory cells
Commercial Applications: Title: Advanced Memory Storage Technology for Semiconductor Devices This technology could be utilized in various commercial applications such as: - Consumer electronics - Data centers - Automotive systems
Questions about the Technology: 1. How does this semiconductor device improve memory cell performance?
This technology enhances memory cell performance by optimizing data storage and retrieval processes.
2. What sets this memory cell array apart from traditional designs?
The inclusion of resistors and switching elements in the conductive paths distinguishes this memory cell array from conventional designs.
Original Abstract Submitted
In one embodiment, a semiconductor device includes: a memory cell array including a plurality of first conductive lines extending in a first direction, a plurality of second conductive lines extending in a second direction, and a plurality of memory cells disposed at intersections between the first conductive lines and the second conductive lines; a first driver coupled to the first conductive lines and configured to drive the first conductive lines; a second driver coupled to the second conductive lines and configured to drive the second conductive lines; a first resistor coupled in series to each of the first conductive lines and between the first driver and the first conductive lines; and a first switching element coupled in a conductive path that is in parallel to the first resistor and is between the first driver and the first conductive lines and operable to turn on or off the conductive path.
