Sony semiconductor solutions corporation (20240347572). PHOTODETECTOR AND ELECTRONIC APPARATUS simplified abstract
Contents
PHOTODETECTOR AND ELECTRONIC APPARATUS
Organization Name
sony semiconductor solutions corporation
Inventor(s)
HIROSHI Isobe of KANAGAWA (JP)
TAICHI Yamada of KANAGAWA (JP)
YOICHI Negoro of KANAGAWA (JP)
PHOTODETECTOR AND ELECTRONIC APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240347572 titled 'PHOTODETECTOR AND ELECTRONIC APPARATUS
The photodetector described in the patent application aims to prevent the deterioration of contact characteristics between connection pads in a semiconductor device.
- The photodetector includes at least two semiconductor layers and wiring layers on each side in a stacking direction, with insulating films and connection pads provided in each wiring layer.
- The connection pads are electrically coupled to each other, preventing contact degradation over time.
- The semiconductor layers include a layer with a photoelectric conversion region, while the insulating films consist of a first insulating film and a second insulating film with higher rigidity.
- The second insulating film is positioned between the connection pad and at least one of the semiconductor layers, enhancing the overall durability and performance of the photodetector.
Potential Applications: - Photovoltaic cells - Optical sensors - Imaging devices
Problems Solved: - Preventing deterioration of contact characteristics between connection pads - Enhancing the durability and performance of photodetectors
Benefits: - Improved reliability and longevity of semiconductor devices - Enhanced signal transmission and efficiency in photodetection applications
Commercial Applications: Title: Advanced Photodetector Technology for Enhanced Signal Transmission This technology can be utilized in the development of high-performance photodetectors for various industries, including telecommunications, medical imaging, and security systems.
Prior Art: Readers can explore prior research on semiconductor device design, photodetector technology, and materials science to gain a deeper understanding of the innovations presented in this patent application.
Frequently Updated Research: Researchers are continually exploring new materials and design strategies to improve the performance and efficiency of photodetectors. Stay updated on the latest advancements in semiconductor technology and optoelectronics for potential future applications.
Questions about Photodetector Technology: 1. How does the use of multiple semiconductor layers enhance the performance of the photodetector? - The multiple semiconductor layers allow for improved light absorption and signal conversion, enhancing the overall efficiency of the photodetector. 2. What are the potential challenges in integrating the second insulating film with higher rigidity into the wiring layers? - The integration of the second insulating film may require precise manufacturing processes to ensure proper alignment and adhesion within the device structure.
Original Abstract Submitted
provided is a photodetector in which the deterioration of contact characteristics between connection pads is prevented. the photodetector includes at least two semiconductor layers, and a wiring layer on one side in a stacking direction and a wiring layer on another side in the stacking direction, the wiring layers being interposed between the semiconductor layers, each including an insulating film and a connection pad provided in the insulating film, and being electrically coupled to each other with surfaces of the connection pads bonded together, in which the at least two semiconductor layers include a semiconductor layer with a photoelectric conversion region on a light incident surface side, the insulating film includes a first insulating film and a second insulating film that includes a material with a higher rigidity than a material of the first insulating film and penetrates the first insulating film in the stacking direction, and the second insulating film is provided between the connection pad and at least one of the semiconductor layers.
