18365726. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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Inventor(s)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18365726 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation:
This semiconductor device includes a memory cell with a variable resistance layer, connected to a word line and a bit line that intersect each other.
Key Features and Innovation:
- First contact plug
- Word line extending in a first direction
- Second contact plug
- Bit line extending in a second direction
- Memory cell with variable resistance layer
Potential Applications:
This technology can be used in various memory storage applications, such as non-volatile memory devices and resistive random-access memory (ReRAM) devices.
Problems Solved:
This technology addresses the need for high-density, low-power memory solutions with improved performance and reliability.
Benefits:
- Increased memory density
- Lower power consumption
- Enhanced performance and reliability
Commercial Applications:
Potential commercial applications include data storage devices, IoT devices, and mobile devices, where high-density and low-power memory solutions are crucial for efficient operation.
Questions about Semiconductor Devices:
1. How does the variable resistance layer in the memory cell contribute to the device's performance? 2. What are the key advantages of using a word line and bit line configuration in this semiconductor device?
Frequently Updated Research:
Researchers are continually exploring new materials and designs to further improve the performance and efficiency of semiconductor memory devices.
Original Abstract Submitted
A semiconductor device may include a first contact plug, a word line electrically connected to the first contact plug and extending in a first direction, a second contact plug, a bit line extending in a second direction that intersects the first direction, and a memory cell disposed between the word line and the bit line and including a variable resistance layer. The bit line may include a first protruding part that protrudes into the memory cell, a second protruding part that is connected to the second contact plug, and a connection part that connects the first protruding part and the second protruding part and that extends in the second direction.
