Sony semiconductor solutions corporation (20240347558). SOLID-STATE IMAGING ELEMENT AND IMAGING APPARATUS simplified abstract
Contents
SOLID-STATE IMAGING ELEMENT AND IMAGING APPARATUS
Organization Name
sony semiconductor solutions corporation
Inventor(s)
Kazuhiko Nakadate of Kanagawa (JP)
Toshifumi Wakano of Kanagawa (JP)
Masahiko Nakamizo of Kanagawa (JP)
SOLID-STATE IMAGING ELEMENT AND IMAGING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240347558 titled 'SOLID-STATE IMAGING ELEMENT AND IMAGING APPARATUS
Simplified Explanation:
This patent application describes a solid-state imaging element of a pixel sharing type with improved driving of transistors. The element includes two electric charge accumulating sections and transfer sections for accumulating electric charge from photoelectric conversion elements. Transistors are used to output signals corresponding to the accumulated electric charge.
Key Features and Innovation:
- Solid-state imaging element of a pixel sharing type
- Improved driving of transistors
- Two electric charge accumulating sections
- Transfer sections for accumulating electric charge from photoelectric conversion elements
- Transistors for outputting signals based on accumulated electric charge
Potential Applications: This technology can be used in digital cameras, smartphones, security cameras, and other imaging devices.
Problems Solved: This technology addresses issues related to driving transistors in solid-state imaging elements, improving the efficiency and accuracy of signal output.
Benefits:
- Enhanced performance of imaging devices
- Improved image quality
- Better control over electric charge accumulation
Commercial Applications: Potential commercial applications include the manufacturing of digital cameras, smartphones, and other imaging devices. This technology can also be used in the development of advanced surveillance systems.
Prior Art: Readers interested in prior art related to this technology can explore patents and research papers on solid-state imaging elements, transistor driving techniques, and pixel sharing technologies.
Frequently Updated Research: Researchers in the field of semiconductor technology and imaging devices may be conducting studies on improving the efficiency of transistor driving in solid-state imaging elements.
Questions about Solid-State Imaging Elements with Improved Transistor Driving: 1. What are the key advantages of using a pixel sharing type solid-state imaging element? 2. How does improved transistor driving impact the overall performance of imaging devices?
Original Abstract Submitted
a solid-state imaging element of a pixel sharing type with improved driving of transistors is disclosed. a first electric charge accumulating section and a second electric charge accumulating section are arranged in a predetermined direction. a first transfer section transfers electric charge from first photoelectric conversion elements to the first electric charge accumulating section, causing it to accumulate the electric charge. a second transfer section transfers electric charge from second photoelectric conversion elements to the second electric charge accumulating section, causing it to accumulate the electric charge. a first transistor is configured to output a signal corresponding to an amount of the electric charge accumulated in each of the first electric charge accumulating section and the second electric charge accumulating section. a second transistor is arranged with the first transistor in the predetermined direction and connected in parallel to the first transistor.
