Sony semiconductor solutions corporation (20240347091). MEMORY DEVICE AND MEMORY SYSTEM simplified abstract

MEMORY DEVICE AND MEMORY SYSTEM

Organization Name

sony semiconductor solutions corporation

Inventor(s)

LUI Sakai of KANAGAWA (JP)

MEMORY DEVICE AND MEMORY SYSTEM - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240347091 titled 'MEMORY DEVICE AND MEMORY SYSTEM

The patent application describes a memory device designed to reduce the time required for writing data.

• The memory device includes a magnetic memory element, an auxiliary magnetic field application unit, and a write control unit.
• The magnetic memory element consists of a reference layer with a fixed magnetization direction and a storage layer stacked on top, storing data in parallel and anti-parallel states.
• The auxiliary magnetic field application unit supports the transition of the memory element from the parallel state to the anti-parallel state.
• The write control unit initializes the memory element by applying an initialization voltage and magnetic field, then performs writing by applying a state inversion voltage and magnetic field according to the data.
• This technology allows for faster data writing by efficiently controlling the magnetization direction of the memory element.

1. 1. 1. Potential Applications:

This technology could be applied in various data storage devices, such as hard drives and solid-state drives, to improve write speeds and efficiency.

1. 1. 1. Problems Solved:

This technology addresses the issue of long write times in memory devices, enhancing overall performance and data processing capabilities.

1. 1. 1. Benefits:

- Faster data writing speeds - Improved efficiency in data storage devices - Enhanced performance in memory operations

1. 1. 1. Commercial Applications:

Title: Enhanced Data Writing Technology for Memory Devices This technology could be utilized in commercial data storage solutions, leading to faster and more efficient data processing in various industries such as IT, telecommunications, and data centers.

1. 1. 1. Prior Art:

Researchers can explore prior patents related to magnetic memory elements and data writing technologies to understand the evolution of this field.

1. 1. 1. Frequently Updated Research:

Researchers are continuously working on improving data writing technologies in memory devices to enhance speed and efficiency. Stay updated on the latest advancements in this area for potential future applications.

1. 1. 1. 1. Questions about Magnetic Memory Element Technology:

1. How does the magnetic memory element transition between parallel and anti-parallel states? 2. What are the key advantages of using an auxiliary magnetic field in data writing processes?

Original Abstract Submitted

to reduce a time period required for writing data. a memory device includes a magnetic memory element, an auxiliary magnetic field application unit, and a write control unit, in which the magnetic memory element includes a reference layer having a fixed magnetization direction, and a storage layer stacked on the reference layer via an insulating layer and having a reversible magnetization direction, and that stores data in association with two states of a parallel state and an anti-parallel state, the parallel state having the same magnetization directions in the reference layer and the storage layer and the anti-parallel state having different magnetization directions in the reference layer and the storage layer, the auxiliary magnetic field application unit applies an auxiliary magnetic field supporting transition of the magnetic memory element from the parallel state to the anti-parallel state, and the write control unit performs initialization by applying an initialization voltage and an initialization magnetic field to the magnetic memory element to bring the magnetic memory element into the anti-parallel state, and writing by performing state inversion to apply a state inversion voltage and a state inversion magnetic field to the initialized magnetic memory element, according to the data, the state inversion voltage and state inversion magnetic field being used to bring the magnetic memory element in the anti-parallel state, into the parallel state.