International business machines corporation (20240349631). METAL FERROELECTRIC INSULATOR METAL STACK IN RRAM simplified abstract

METAL FERROELECTRIC INSULATOR METAL STACK IN RRAM

Organization Name

international business machines corporation

Inventor(s)

Takashi Ando of Eastchester NY (US)

Reinaldo Vega of Mahopac NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

David Wolpert of Poughkeepsie NY (US)

METAL FERROELECTRIC INSULATOR METAL STACK IN RRAM - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240349631 titled 'METAL FERROELECTRIC INSULATOR METAL STACK IN RRAM

Simplified Explanation: The patent application describes a memory structure with a unique dielectric stack that includes both a ferroelectric dielectric layer and a paraelectric dielectric layer. The ferroelectric layer produces negative capacitance to amplify an applied voltage, while the thickness of both layers leads to the breakdown of the dielectric material, forming conductive filaments when exposed to an electric field. The structure also includes electrodes at each end for applying the voltage.

• The memory structure includes a dielectric stack with a ferroelectric dielectric layer and a paraelectric dielectric layer.
• The ferroelectric layer produces negative capacitance to amplify the applied voltage.
• The thickness of the layers results in simultaneous breakdown of the dielectric material, forming conductive filaments.
• Electrodes at each end of the stack allow for the application of voltage.

Key Features and Innovation: - Unique dielectric stack design with ferroelectric and paraelectric layers - Negative capacitance for voltage amplification - Formation of conductive filaments through dielectric breakdown - Electrodes for voltage application

Potential Applications: - Non-volatile memory devices - High-density storage solutions - Neuromorphic computing systems

Problems Solved: - Enhancing voltage amplification - Improving memory storage efficiency - Facilitating the formation of conductive filaments

Benefits: - Increased memory performance - Higher storage capacity - Enhanced energy efficiency

Commercial Applications: Title: Advanced Memory Structures for Next-Generation Electronics Potential commercial uses include: - Memory chips for consumer electronics - Data storage solutions for cloud computing - Neuromorphic computing applications

Prior Art: Readers can explore prior research on ferroelectric and paraelectric materials in memory devices, as well as studies on negative capacitance effects in dielectric materials.

Frequently Updated Research: Researchers are continually investigating the optimization of dielectric stack designs for improved memory performance and efficiency.

Questions about Memory Structures: 1. How does the unique dielectric stack design contribute to the memory structure's performance? 2. What are the potential challenges in scaling this memory technology for mass production?

Original Abstract Submitted

a memory structure that includes a dielectric stack of a ferroelectric dielectric layer and a paraelectric dielectric layer. at least the ferroelectric dielectric layer produces a negative capacitance to amplify an applied voltage. a thickness of the ferroelectric dielectric layer and the paraelectric dielectric layer results in simultaneous breakdown of a dielectric material in each of the ferroelectric dielectric layer and the paraelectric dielectric layer for the formation of conductive filaments upon being exposed to an electric field produced by the applied voltage amplified by the negative capacitance. the memory structure also includes a first electrode at a first end of the dielectric stack, and a second electrode at a second end of the dielectric stack. the applied voltage is applied to the memory structure through at least one of the first electrode and the second electrode.