International business machines corporation (20240349620). MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA simplified abstract

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MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA

Organization Name

international business machines corporation

Inventor(s)

Daniel Worledge of San Jose CA (US)

Guohan Hu of Yorktown Heights NY (US)

MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240349620 titled 'MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA

Simplified Explanation:

This patent application describes a magnetoresistive random access memory (MRAM) with enhanced data retention by constructing a magnetic tunnel junction (MTJ) pillar with a temperature-independent delta value.

  • The MRAM includes spin-transfer torque (STT) MRAM technology.
  • The MTJ pillar has a temperature-independent delta value to enhance data retention.
  • The delta value is defined as delta=Eb/kT, where Eb is the activation energy, k is Boltzmann's constant, and T is the absolute temperature.
  • The application proposes a method for Eb to increase with temperature, canceling out the effect of the term kT, resulting in a temperature-independent delta.

Potential Applications: The technology can be applied in various electronic devices requiring non-volatile memory with enhanced data retention capabilities.

Problems Solved: The technology addresses the issue of data loss in MRAM due to temperature variations, ensuring reliable data storage.

Benefits: - Enhanced data retention in MRAM - Improved reliability of non-volatile memory - Increased performance of electronic devices

Commercial Applications: Title: Enhanced MRAM Technology for Reliable Data Storage This technology can be utilized in smartphones, tablets, IoT devices, and other electronic gadgets requiring high-speed, reliable memory storage.

Prior Art: Researchers can explore prior patents related to MRAM technology, STT-MRAM, and data retention techniques in non-volatile memory devices.

Frequently Updated Research: Researchers are continuously working on improving MRAM technology, exploring new materials and structures to enhance data retention and performance.

Questions about MRAM Technology: 1. How does the temperature-independent delta value improve data retention in MRAM? 2. What are the potential challenges in implementing this technology in commercial electronic devices?


Original Abstract Submitted

a magnetoresistive random access memory (mram) including spin-transfer torque (stt) mram is provided that has enhanced data retention. the enhanced data retention is provided by constructing a mtj pillar having a temperature-independent delta, where delta is delta=eb/kt, wherein eb is the activation energy, k is the boltzmann's constant, and t is the absolute temperature. notably, the present application provides a way for eb to actually increase with temperature, which can cancel the effect of the term kt, resulting in a temperature independent delta.

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