International business machines corporation (20240347423). METAL CONTACT CONNECTION THROUGH DIFFUSION BREAK AREA simplified abstract

METAL CONTACT CONNECTION THROUGH DIFFUSION BREAK AREA

Organization Name

international business machines corporation

Inventor(s)

Sagarika Mukesh of ALBANY NY (US)

Shravana Kumar Katakam of Lehi UT (US)

Tao Li of Slingerlands NY (US)

Ruilong Xie of Niskayuna NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Julien Frougier of Albany NY (US)

METAL CONTACT CONNECTION THROUGH DIFFUSION BREAK AREA - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240347423 titled 'METAL CONTACT CONNECTION THROUGH DIFFUSION BREAK AREA

Simplified Explanation: The patent application describes a semiconductor structure with an array of transistors on a substrate, connected by a metal connection from the frontside to the backside.

• The structure includes an array of transistors on a semiconductor substrate.
• The array consists of a first transistor and a second transistor positioned next to each other.
• A metal connection links the first transistor to the second transistor.
• The metal connection connects a first metal contact on the frontside to a second metal contact on the backside of the array.

Key Features and Innovation:

• Semiconductor structure with an array of transistors.
• Metal connection linking transistors from frontside to backside.
• Improved connectivity and efficiency in semiconductor devices.

Potential Applications: This technology can be applied in:

• Integrated circuits
• Microprocessors
• Memory devices

Problems Solved:

• Enhances connectivity in semiconductor structures.
• Improves signal transmission between transistors.
• Increases efficiency and performance of semiconductor devices.

Benefits:

• Enhanced connectivity and signal transmission.
• Improved efficiency and performance of semiconductor devices.
• Potential for smaller and more powerful electronic devices.

Commercial Applications: Potential commercial applications include:

• Electronics manufacturing industry
• Semiconductor device manufacturers
• Research and development in semiconductor technology

Prior Art: Readers can explore prior art related to semiconductor structures, metal connections in transistors, and advancements in semiconductor technology.

Frequently Updated Research: Stay informed about the latest research on semiconductor structures, metal connections, and advancements in semiconductor technology.

Questions about Semiconductor Structures: 1. What are the key components of a semiconductor structure? 2. How does the metal connection improve connectivity in transistors?

Original Abstract Submitted

embodiments of present invention provide a semiconductor structure. the structure includes an array of transistors on a semiconductor substrate, the array of transistors including a first transistor and a second transistor, the second transistor being next to the first transistor; and a metal connection between the first transistor and the second transistor, wherein the metal connection connects a first metal contact at a frontside of the array of transistors to a second metal contact at a backside of the array of transistors. a method of forming the same is also provided.