Panasonic intellectual property management co., ltd. (20240347238). CHIP RESISTOR AND METHOD FOR MANUFACTURING CHIP RESISTOR simplified abstract
Contents
CHIP RESISTOR AND METHOD FOR MANUFACTURING CHIP RESISTOR
Organization Name
panasonic intellectual property management co., ltd.
Inventor(s)
Daisuke Suetsugu of Osaka (JP)
Norimichi Noguchi of Osaka (JP)
Nobutoshi Takagi of Hyogo (JP)
CHIP RESISTOR AND METHOD FOR MANUFACTURING CHIP RESISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240347238 titled 'CHIP RESISTOR AND METHOD FOR MANUFACTURING CHIP RESISTOR
The abstract describes a patent application for a chip resistor that can achieve high specific resistance and a low temperature coefficient of resistance (TCR).
- Insulating substrate
- Resistive layer made of an alloy containing Cr, Si, and N
- First high-nitrogen-containing layer on top of the resistive layer, with a higher N atomic percentage than the resistive layer
Potential Applications: - Electronics manufacturing - Circuit design - Semiconductor industry
Problems Solved: - Achieving high specific resistance - Maintaining a low TCR in chip resistors
Benefits: - Improved performance in electronic devices - Enhanced stability and reliability - Cost-effective manufacturing process
Commercial Applications: Title: "Advanced Chip Resistors for High-Performance Electronics" This technology can be used in various commercial applications such as consumer electronics, automotive electronics, and telecommunications equipment.
Questions about the technology: 1. How does the composition of the resistive layer contribute to achieving high specific resistance? 2. What are the advantages of using a high-nitrogen-containing layer in chip resistors?
Original Abstract Submitted
a chip resistor capable of achieving both high specific resistance, a low tcr is provided. a chip resistor includes: an insulating substrate; a resistive layer formed of an alloy containing cr, si, and n, the resistive layer being provided on the insulating substrate; and a first high-nitrogen-containing layer provided on the resistive layer, the first high-nitrogen-containing layer being made of an alloy having a n atomic percentage higher than a n atomic percentage of the resistive layer.
