18435218. SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
Contents
SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL
Organization Name
TOYOTA JIDOSHA KABUSHIKI KAISHA
Inventor(s)
NOBUYUKI Oya of Nisshin-shi (JP)
TAKESHI Okamoto of Nisshin-shi (JP)
AKIYOSHI Horiai of Nisshin-shi (JP)
SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL - A simplified explanation of the abstract
This abstract first appeared for US patent application 18435218 titled 'SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL
Simplified Explanation: The patent application describes a silicon carbide single crystal with a specific resistance that changes gradually in a repeated pattern along the growth direction of the crystal.
- The silicon carbide single crystal has a region where the specific resistance undergoes a gradual increase and decrease.
- The change in specific resistance occurs within a range of 0.5% to 50%.
- The repeated pattern of specific resistance change has a period of 500 μm or less in terms of crystal length.
Key Features and Innovation:
- Silicon carbide single crystal with a unique pattern of specific resistance change.
- Gradual increase and decrease of specific resistance along the crystal growth direction.
- Changing range of specific resistance from 0.5% to 50%.
- Repeated pattern with a period of 500 μm or less.
Potential Applications: This technology could be used in:
- Semiconductor industry for high-performance electronic devices.
- Power electronics for efficient energy conversion.
- Sensor technology for precise measurements.
Problems Solved:
- Provides a unique crystal structure for improved electronic performance.
- Offers a controlled pattern of specific resistance change for tailored applications.
Benefits:
- Enhanced electronic properties.
- Improved efficiency in energy conversion.
- Precise and reliable sensor measurements.
Commercial Applications: Title: Advanced Silicon Carbide Single Crystal Technology for Electronic Devices This technology can be applied in:
- Semiconductor manufacturing for high-performance devices.
- Power electronics industry for efficient energy conversion systems.
- Sensor technology for accurate and reliable measurements.
Prior Art: Readers can explore prior research on silicon carbide single crystals and their applications in the semiconductor industry.
Frequently Updated Research: Stay updated on the latest advancements in silicon carbide single crystal technology for electronic applications.
Questions about Silicon Carbide Single Crystal Technology: 1. What are the potential drawbacks of using silicon carbide single crystals in electronic devices? 2. How does the specific resistance change in the silicon carbide single crystal affect its performance in power electronics?
Original Abstract Submitted
A silicon carbide single crystal includes a region in which a change of a specific resistance is repeated in a growth direction of the silicon carbide single crystal, and the change of the specific resistance is a gradual increase and decrease of the specific resistance. A changing range of the specific resistance may be within a range from 0.5% to 50% inclusive. A changing period of the gradual increase and decrease of the specific resistance that is repeated may be 500 μm or less in terms of a length of the silicon carbide single crystal.
