18745977. DISPLAY DEVICE simplified abstract (SAMSUNG DISPLAY CO., LTD.)
Contents
DISPLAY DEVICE
Organization Name
Inventor(s)
Yeon Hong Kim of Hwaseong-si (KR)
DISPLAY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18745977 titled 'DISPLAY DEVICE
The display device described in the patent application includes multiple layers on a substrate, such as a corrosion prevention layer, conductive layers, insulating films, a semiconductor layer, and a barrier layer with a main conductive layer.
- The corrosion prevention layer is made of an inorganic material to protect the substrate.
- The first conductive layer is made of aluminum or an aluminum alloy.
- The semiconductor layer contains an oxide semiconductor and includes a channel region of a transistor.
- The barrier layer, made of titanium, is between the semiconductor layer and the main conductive layer, overlapping the channel region of the transistor.
Potential Applications: - This technology can be used in the manufacturing of high-quality display devices for electronic devices such as smartphones, tablets, and laptops.
Problems Solved: - The corrosion prevention layer helps to increase the durability and longevity of the display device. - The semiconductor layer with an oxide semiconductor improves the performance of the transistor.
Benefits: - Enhanced durability and corrosion resistance. - Improved performance of the display device. - Higher quality and reliability of electronic devices.
Commercial Applications: - This technology can be utilized by display manufacturers to produce advanced and long-lasting display devices for consumer electronics, potentially increasing market competitiveness.
Questions about the technology: 1. How does the use of an oxide semiconductor in the semiconductor layer impact the performance of the display device? 2. What are the advantages of using a barrier layer with a main conductive layer in the display device design?
Original Abstract Submitted
A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.
