18386898. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Beom Jin Kim of Suwon-si (KR)

Guk Hee Kim of Suwon-si (KR)

Young Woo Kim of Suwon-si (KR)

Jun Soo Kim of Suwon-si (KR)

Sang Cheol Na of Suwon-si (KR)

Kyoung Woo Lee of Suwon-si (KR)

Anthony Dongick Lee of Suwon-si (KR)

Min Seung Lee of Suwon-si (KR)

Myeong Gyoon Chae of Suwon-si (KR)

Seung Seok Ha of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18386898 titled 'SEMICONDUCTOR DEVICE

The semiconductor device described in the abstract includes various components such as a substrate, active pattern, field insulating layer, gate electrode, source/drain region, interlayer insulating layer, through via, source/drain contact, and connection portion.

• The active pattern extends in a first horizontal direction on the substrate, with a field insulating layer surrounding its sidewall.
• A gate electrode extends in a second horizontal direction intersecting the first direction on the active pattern.
• Source/drain regions are located on at least one side of the gate electrode on the active pattern.
• An upper interlayer insulating layer covers the source/drain region and a through via penetrates through the substrate, field insulating layer, and upper interlayer insulating layer in a vertical direction.
• The source/drain contact is inside the upper interlayer insulating layer and connected to the source/drain region.
• A connection portion inside the upper interlayer insulating layer is connected to the through via and the source/drain contact, with a greater width in the first horizontal direction than the source/drain contact.

Potential Applications: - This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers. - It can also be applied in automotive technology for advanced driver assistance systems.

Problems Solved: - The device addresses the need for efficient and compact semiconductor components in modern electronics. - It provides improved connectivity and functionality in electronic circuits.

Benefits: - Enhanced performance and reliability in electronic devices. - Space-saving design for compact electronic products.

Commercial Applications: - The technology can be utilized by semiconductor manufacturers to produce high-performance electronic components for consumer electronics and automotive applications.

Questions about the technology: 1. How does the through via improve the connectivity of the semiconductor device? 2. What are the advantages of having a greater width in the connection portion compared to the source/drain contact?

Original Abstract Submitted

A semiconductor device is provided. The semiconductor device includes a substrate, an active pattern extending in a first horizontal direction on an upper surface of the substrate, a field insulating layer surrounding a sidewall of the active pattern on the upper surface of the substrate, a first gate electrode extending in a second horizontal direction intersecting the first horizontal direction on the active pattern, a source/drain region disposed on at least one side of the first gate electrode on the active pattern, an upper interlayer insulating layer covering the source/drain region on the field insulating layer, a through via penetrating through the substrate, the field insulating layer and the upper interlayer insulating layer in a vertical direction, the through via spaced apart from the source/drain region in the second horizontal direction, a source/drain contact disposed inside the upper interlayer insulating layer on at least one side of the first gate electrode, the source/drain contact connected to the source/drain region, and a connection portion disposed inside the upper interlayer insulating layer, the connection portion connected to each of the through via and the source/drain contact, wherein a width of the connection portion in the first horizontal direction is greater than a width of the source/drain contact in the first horizontal direction.