18478215. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jin Young Choi of SUWON-SI (KR)
Woo Sung Park of SUWON-SI (KR)
Han Young Song of SUWON-SI (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18478215 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application includes various components such as a back interlayer insulating film, a back wiring line, a fin-shaped pattern, a field insulating film, a source/drain pattern, a source/drain contact, and a contact connecting via.
- The back interlayer insulating film provides insulation between different layers of the semiconductor device.
- The back wiring line is a conductive line located within the back interlayer insulating film.
- The fin-shaped pattern is situated on the first surface of the back wiring line.
- The field insulating film is placed on top of the fin-shaped pattern.
- The source/drain pattern is positioned on the fin-shaped pattern.
- The source/drain contact is connected to the source/drain pattern.
- The contact connecting via connects the back wiring line and the source/drain contact.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices. - It can improve the performance and efficiency of integrated circuits.
Problems Solved: - Provides a reliable and efficient way to connect different components within a semiconductor device. - Enhances the overall functionality of the device.
Benefits: - Improved connectivity and performance of semiconductor devices. - Enhanced reliability and efficiency in circuit design.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Connectivity This technology can be applied in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It can also be utilized in the automotive industry for advanced driver assistance systems and in the healthcare sector for medical imaging devices.
Questions about the technology: 1. How does the height difference between the back wiring line and the field insulating film impact the overall performance of the semiconductor device? 2. What are the specific advantages of using a fin-shaped pattern in the design of the device?
Original Abstract Submitted
A semiconductor device includes a back interlayer insulating film, a back wiring line in the back interlayer insulating film, a fin-shaped pattern on a first surface of the back wiring line, a field insulating film disposed on the fin-shaped pattern, a source/drain pattern on the fin-shaped pattern, a source/drain contact disposed on the source/drain pattern and connected to the source/drain pattern and a contact connecting via connecting the back wiring line and the source/drain contact, and is in contact with the back wiring line. The contact connecting via includes a first surface connected to the source/drain contact, and a second surface contacted to the back wiring line. A height from a second surface of the back wiring line to an upper surface of the field insulating film is smaller than a height from the second surface of the back wiring line to the first surface of the contact connecting via.
