Tokyo electron limited (20240339328). MULTI LEVEL CONTACT ETCH simplified abstract
Contents
MULTI LEVEL CONTACT ETCH
Organization Name
Inventor(s)
Minjoon Park of Albany NY (US)
MULTI LEVEL CONTACT ETCH - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339328 titled 'MULTI LEVEL CONTACT ETCH
The method described in the patent application involves processing a substrate by forming a conformal etch stop layer (ESL) over a staircase pattern on the substrate, followed by the formation of a dielectric layer, planarization of the dielectric layer, and the formation of a patterned hardmask. The dielectric layer is then selectively etched to the ESL using the patterned hardmask as an etch mask to create recesses that land on each of the staircases, with the ESL protecting the conductive surface during the etching process.
- Conformal etch stop layer (ESL) is formed over a staircase pattern on the substrate.
- Dielectric layer is formed over the ESL and planarized.
- Patterned hardmask is formed over the dielectric layer.
- Dielectric layer is selectively etched to the ESL using the patterned hardmask as an etch mask to create recesses.
- Etching process involves exposing the substrate to a plasma generated from a process gas containing a fluorocarbon, O, and wf, with a specific flow rate of wf.
Potential Applications: - Semiconductor manufacturing - Microelectronics industry - Nanotechnology research
Problems Solved: - Precise etching of dielectric layers - Protection of conductive surfaces during etching processes
Benefits: - Improved accuracy in etching processes - Enhanced protection of sensitive components - Increased efficiency in substrate processing
Commercial Applications: Title: Advanced Semiconductor Etching Technology This technology can be used in the semiconductor industry for the precise etching of dielectric layers, leading to improved performance and reliability of electronic devices. The market implications include faster production processes and higher quality semiconductor products.
Questions about the technology: 1. How does the specific flow rate of wf in the process gas impact the etching process? 2. What are the key advantages of using a conformal etch stop layer (ESL) in substrate processing?
Original Abstract Submitted
a method of processing a substrate that includes: forming a conformal etch stop layer (esl) over a staircase pattern of the substrate, the staircase pattern including staircases, each of the staircases including a conductive surface; forming a dielectric layer over the esl; planarizing a top surface of the dielectric layer; forming a patterned hardmask over the dielectric layer; and etching the dielectric layer selectively to the esl using the patterned hardmask as an etch mask to form a plurality of recesses, each of the plurality of recesses landing on each of the staircases, the esl protecting the conductive surface from the etching, the etching including exposing the substrate to a plasma generated from a process gas including a fluorocarbon, o, and wf, a flow rate of wfbeing between 0.01% and 1% of a total gas flow rate of the process gas.
